米6体育平台手机版

ZHCSGK5B July 2017 – August 2024 ESD401

PRODUCTION DATA

5.6 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_RWM	Reverse stand-off voltage	I_IO < 10 nA	–5.5		5.5	V
V_BRF	Breakdown voltage, Pin 1 to Pin 2 ⁽¹⁾	I_IO =1 mA, at T_A = 25°C	7.5		9.1	V
V_BRR	Breakdown voltage, Pin 2 to Pin 1 ⁽¹⁾	I_IO =1 mA, at T_A = 25°C	7.5		9.1	V
V_HOLD	Holding voltage ⁽²⁾	I_IO =1 mA		8.3		V
V_CLAMP	Clamping voltage	I_PP = 1 A, TLP, from Pin 1 to Pin 2 and Pin 2 to Pin 1, T_A = 25°C		11		V
		I_PP = 5 A, TLP, from Pin 1 to Pin 2 and Pin 2 to Pin 1, T_A = 25°C		16
		I_PP = 16 A, TLP, from Pin 1 to Pin 2 and Pin 2 to Pin 1, T_A = 25°C		24
		I_PP = 1.8 A, IEC-61000-4-5 (t_p - 8/20 µs) from Pin 1 to Pin 2 and Pin 2 to Pin 1, T_A = 25°C		12
		I_PP = 4.5 A, IEC-61000-4-5 (t_p - 8/20 µs) from Pin 1 to Pin 2 and Pin 2 to Pin 1, T_A = 25°C		15
I_LEAK	Leakage current, Pin 1 to Pin2 and PIn2 to Pin 1	V_IO = ±2.5 V		0.03	10	nA
R_DYN	Dynamic resistance	Measured between TLP I_PP of 10 A and 20 A, Pin 2 to Pin 1 and Pin 1 to Pin2, T_A = 25°C		0.7		Ω
C_L	Line capacitance	V_IO = 0 V, f = 1 MHz, Pin 1 to Pin 2 and Pin2 to Pin1, T_A = 25°C		0.77	0.95	pF

(1) V_BRF and V_BRR are defined as the voltage obtained at 1 mA when sweeping the voltage up, before the device latches into the snapback state.

(2) V_HOLD is defined as the voltage when 1 mA is applied, after the device has successfully latched into the snapback state.