ZHCSR11C September   2022  – December 2022 ESD1LIN24-Q1 , ESD751-Q1 , ESD761-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings—AEC Specification
    3. 6.3  ESD Ratings—IEC Specification
    4. 6.4  ESD Ratings - ISO Specification
    5. 6.5  Recommended Operating Conditions
    6. 6.6  Thermal Information
    7. 6.7  Electrical Characteristics
    8. 6.8  Typical Characteristics – ESD751
    9. 6.9  Typical Characteristics – ESD1LIN24
    10. 6.10 Typical Characteristics - ESD761
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 IEC 61000-4-5 Surge Protection
      2. 7.3.2 IO Capacitance
      3. 7.3.3 Dynamic Resistance
      4. 7.3.4 DC Breakdown Voltage
      5. 7.3.5 Ultra Low Leakage Current
      6. 7.3.6 Clamping Voltage
      7. 7.3.7 Industry Standard Packages
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.2.2 Detailed Design Procedure

The ESD1LIN24-Q1, ESD751-Q1, and ESD761-Q1 have a VRWM of ±24 V to protect the diode from being damaged during a short to battery event that can occur by reversing the terminal connections during jumpstart. The bidirectional characteristic ensures both positive and negative polarity are protected. The low capacitance of 5 pF or less permits data rates up to 10 Mbps, which allows the designer to meet the requirements for LIN. The 1 kΩ and VSUP diode allows the LIN signal to be pulled up to a diode drop below the battery voltage.
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