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ZHCSR66C November 2022 – December 2022 ESD751 , ESD761

PRODUCTION DATA

封装选项

机械数据 (封装 | 引脚)

DYA|2
- MPSS124A

散热焊盘机械数据 (封装 | 引脚)

订购信息

6.6 Electrical Characteristics

over T_A = 25°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS	DEVICE	MIN	TYP	MAX	UNIT
V_RWM	Reverse stand-off voltage			–24		24	V
V_BRF	Breakdown voltage(2)	I_IO = 10 mA, IO to GND		25.5		35.5	V
V_BRR	Breakdown voltage(2)	I_IO = –10 mA, IO to GND		–35.5		–25.5	V
V_CLAMP	Clamping voltage(3)	I_PP = 2.8 A, t_p = 8/20 µs, IO to GND and GND to IO	ESD751		36.5		V
	Clamping voltage(3)	I_PP = 1.8 A, t_p = 8/20 µs, IO to GND and GND to IO	ESD761		36.3		V
	Clamping voltage(4)	I_PP = 16 A, TLP, IO to GND and GND to IO	ESD751		41.5		V
	Clamping voltage(4)	I_PP = 16 A, TLP, IO to GND and GND to IO	ESD761		42.5		V
I_LEAK	Leakage current	V_IO = ±24 V, IO to GND		-50	1	50	nA
R_DYN	Dynamic resistance(4)		ESD751		0.6		Ω
R_DYN	Dynamic resistance(4)		ESD761		0.53		Ω
C_L	Line capacitance	V_IO = 0 V, f = 1 MHz, V_pp = 30 mV, IO to GND	ESD751		1.6	2.7	pF
C_L	Line capacitance	V_IO = 0 V, f = 1 MHz, V_pp = 30 mV, IO to GND	ESD761		1.1	1.8	pF

(1) V_BRF and V_BRR are defined as the voltage when ±10 mA is applied in the positive-going direction, before the device latches into the snapback state.

(2) Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

(3) Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008