The ESD751 and ESD761 have a V_RWM of ±24 V to protect the diode from being damaged during a short event that can occur when one of the USB-PD slower speed lines (CC1, CC2, SBU1, SBU2, D+, and D-) is shorted to VBUS. The bidirectional characteristic ensures both positive and negative polarity are protected. The low capacitance of 1.7 pF or less permits data rates up to 480 Mbps, which allows the designer to meet the requirements for the D+ and D- signals. These devices have an IPP = 2.8 A and 1.8 A (8/20 µs), respectively. The surge current capability of these devices is suitable for protecting the VBUS power rail.