米6体育平台手机版

ZHCSIH2C May 2018 – February 2024 ESDS311 , ESDS312 , ESDS314

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

5.6 Electrical Characteristics

At T_A = 25°C unless otherwise noted

PARAMETER		TEST CONDITIONS	Device	MIN	TYP	MAX	UNIT
V_RWM	Reverse stand-off voltage	I_IO < 500nA, across operating temperature range				3.6	V
I_LEAKAGE	Leakage current at 3.6V	V_IO = 3.6V, Any IO pin to GND			5	50	nA
V_BRF	Breakdown voltage, IO to GND ⁽¹⁾	I_IO = 1mA		4.5		7.5	V
V_FWD	Forward Voltage, GND to IO	I_IO = 1mA			0.8		V
V_HOLD	Holding Voltage, IO to GND ⁽²⁾	I_IO = 1mA			5		V
V_CLAMP	Surge Clamping voltage, t_p = 8/20µs	I_PP = 1A, Any IO pin to GND	ESDS312/314		5		V
V_CLAMP		I_PP = 12A, Any IO pin to GND	ESDS311		6.3		V
V_CLAMP		I_PP = 12A, Any IO pin to GND	ESDS312/314		5.6		V
V_CLAMP		I_PP = 25A, Any IO pin to GND	ESDS311		7.7		V
V_CLAMP		I_PP = 25A, Any IO pin to GND	ESDS312/314		6.5		V
V_CLAMP		I_PP = 1A, GND to any IO pin	ESDS312/314		1		V
V_CLAMP		I_PP = 12A, GND to any IO pin	ESDS311		3		V
V_CLAMP		I_PP = 12A, GND to any IO pin	ESDS312/314		2.1		V
V_CLAMP		I_PP = 25A, GND to any IO pin	ESDS311		4.9		V
V_CLAMP		I_PP = 25A, GND to any IO pin	ESDS312/314		3.6		V
V_CLAMP	TLP Clamping Voltage, t_p = 100ns	I_PP = 16A, Any IO pin to GND	ESDS311		6.5		V
V_CLAMP		I_PP = 16A, Any IO pin to GND	ESDS312/314		5.5		V
V_CLAMP		I_PP = 16A, GND to any IO pin	ESDS311		3.4		V
V_CLAMP		I_PP = 16A, GND to any IO pin	ESDS312/314		2.2		V
C_LINE	Line capacitance, Any IO to GND	V_IO = 0V, V_p-p = 30mV, f = 1MHz			4.5	5.5	pF
ΔC_LINE	Variation of line capacitance	C_LINE1 - C_LINE2, V_IO = 0V, Vp-p = 30mV, f = 1MHz	ESDS312/314		0.05	0.1	pF
C_CROSS	Line-to-line capacitance	V_IO = 0V, V_rms = 30mV, f = 1MHz	ESDS312/314		2.25	2.75	pF

(1) V_BRF and V_BRR are defined as the voltage obtained at 1mA when sweeping the voltage up, before the device latches into the snapback state

(2) V_HOLD is defined as the voltage when 1mA is applied, after the device has successfully latched into the snapback state.