米6体育平台手机版

ZHCSV52 March 2024 ESDS452

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

5.6 Electrical Characteristics

At TA = 25°C unless otherwise noted

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_RWM	Reverse stand-off voltage	I_IO < 50nA	-5.5		5.5	V
I_LEAK	Leakage current at V_RWM	VIO = ±5.5 V, I/O to GND and GND to I/O		1	50	nA
V_BR	Breakdown voltage, I/O to GND ⁽¹⁾	I_IO = ±1mA	7	8	9	V
V_CLAMP	Surge clamping voltage, t_p = 8/20 µs ⁽²⁾	I_PP = ±1 A, I/O to GND		7.5	10	V
V_CLAMP	Surge clamping voltage, t_p = 8/20 µs ⁽²⁾	I_PP = ±15 A, I/O to GND		11.5	14	V
V_CLAMP	TLP clamping voltage, t_p = 100ns ⁽³⁾	I_PP = ±16 A, I/O to GND		9.6		V
R_DYN	Dynamic resistance ⁽⁴⁾	I/O to GND		0.29		Ω
R_DYN	Dynamic resistance ⁽⁴⁾	GND to I/O		0.29		Ω
C_LINE	Line capacitance, IO to GND	V_IO= 0 V, f = 1 MHz		3	5	pF

(1) V_BR is defined as the voltage when ±1mA is applied in the positive or negative direction respectively.

(2) Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5

(3) Non-repetitive square wave current pulse, Transmission Line Pulse (TLP); ANSI / ESD STM5.5.1-2008

(4) 8/20 µs (IEC 61000-4-5) dynamic resistance