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ZHCSU26A December 2023 – February 2024 ESDS552

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

5.6 Electrical Characteristics

At T_A = 25°C unless otherwise noted

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_RWM	Reverse stand-off voltage	I_IO < 50nA	-12		12	V
I_LEAKAGE	Leakage current at V_RWM	V_IO = ±12V		10	50	nA
V_BR	Breakdown voltage, IO to GND and GND to IO^⁽¹⁾	I_IO = ±1mA	13.2		18	V
V_CLAMP	Surge clamping voltage, t_p = 8/20µs^⁽²⁾	I_PP = 1A, I/O to GND			19	V
		I_PP = 1A, GND to I/O			19	V
		I_PP = 20A, I/O to GND			23.5	V
		I_PP = 20A, GND to I/O			23.5	V
R_DYN	8/20µs surge Dynamic Resistance	I/O to GND		0.4		Ω
R_DYN	8/20µs surge Dynamic Resistance	GND to I/O		0.38		Ω
C_Line	Line capacitance, IO to GND	V_IO = 0V, f = 1MHz		9.5	11	pF

(1) V_BR is defined as the voltage obtained at 1mA when sweeping the voltage up, before the device latches into the snapback state

(1) Device stressed with 8/20µs exponential decay waveform according to IEC61000-4-5