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ZHCSDR2 April 2015

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

DGS|10
- MPDS035C

散热焊盘机械数据 (封装 | 引脚)

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zhcsdr2_oa

7 Specifications

7.1 Absolute Maximum Ratings⁽¹⁾

		MIN	MAX	UNIT
Input voltage	VDD	–0.3	6	V
	SCL, SDA	–0.3	6	V
	at any other pin	–0.3	VDD+0.3	V
Input current	at any pin		3	mA
Junction temperature⁽²⁾			150	°C
Storage Temperature	T_STG	-65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) The maximum power dissipation is a function of T_J(MAX), R_θJA, and the ambient temperature, T_A. The maximum allowable power dissipation at any ambient temperature is P_DMAX = (T_J(MAX) - T_A)/ R_θJA. All numbers apply for packages soldered directly onto a PC board.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per AEC Q100-002⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per AEC Q100-011	±750	V

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

Over operating temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
Supply voltage (VDD-GND)		3	3.3	3.6	V
Temperature		–40		125	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		FDC1004Q	UNIT
		VSSOP (DGS)
		10 PINS
R_θJA	Junction-to-ambient thermal resistance	46.8	°C/W
R_θJC	Junction-to-case(top) thermal resistance	48.7	°C/W
R_θJB	Junction-to-board thermal resistance	70.6	°C/W

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics⁽¹⁾

Over recommended operating temperature range, V_DD = 3.3 V, for T_A = 25°C (unless otherwise noted).

PARAMETER		TEST CONDITION	TYP⁽³⁾	MAX⁽²⁾	UNIT
POWER SUPPLY
I_DD	Supply current	Conversion mode; Digital input to VDD or GND	750	950	µA
I_DD	Supply current	Standby; Digital input to VDD or GND	29	70	µA
CAPACITIVE INPUT
ICR	Input conversion range		±15		pF
C_OMAX	Max input offset capacitance	per channel, Series resistance at CINn n=1.4 = 0 Ω	100		pF
RES	Effective resolution ⁽⁵⁾	Sample rate = 100S/s ⁽⁴⁾	16		bit
EON	Output noise	Sample rate = 100S/s ⁽⁴⁾	33.2		aF/√Hz
ERR	Absolute error	after offset calibration	±6		fF
TcC_OFF	Offset deviation over temperature	-40°C < T < 125°C	46		fF
G_ERR	Gain error		0.2%
tcG	Gain drift vs. temperature	-40°C < T < 125°C	-37.5		ppm/°C
PSRR	DC power supply rejection	3 V < V_DD < 3.6 V, single-ended mode (channel vs GND)	13.6		fF/V
CAPDAC
FR_CAPDAC	Full-scale range		96.9		pF
TcCOFF_CAPDAC	Offset drift vs. temperature	-40°C < T < 125°C	30		fF
EXCITATION
ƒ	Frequency		25		kHz
V_AC	AC voltage across capacitance		2.4		Vpp
V_DC	Average DC voltage across capacitance		1.2		V
SHIELD
DRV	Driver capability	ƒ = 25 kHz, SHLDn to GND, n = 1,2		400	pF

(1) Electrical Characteristics Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ=TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ>TA. Absolute Maximum Ratings indicate junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.

(2) Limits are ensured by testing, design, or statistical analysis at 25Degree C. Limits over the operating temperature range are ensured through correlations using statistical quality control (SQC) method.

(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.

(4) No external capacitance connected.

(5) Effective resolution is the ratio of converter full scale range to RMS measurement noise.

7.6 I²C Interface Voltage Level

Over recommended operating free-air temperature range, V_DD = 3.3 V, for T_A = T_J = 25°C (unless otherwise noted).

PARAMETER		TEST CONDITIONS	MIN	MAX	UNIT
V_IH	Input high voltage		0.7*V_DD		V
V_IL	Input low voltage			0.3*V_DD	V
V_OL	Output low voltage	Sink current 3 mA		0.4	V
HYS	Hysteresis ⁽¹⁾		0.1*V_DD		V

(1) This parameter is specified by design and/or characterization and is not tested in production.

7.7 I²C Interface Timing

Over recommended operating free-air temperature range, V_DD = 3.3 V, for T_A = T_J = 25°C (unless otherwise noted).

PARAMETER		TEST CONDITIONS	MIN	MAX	UNIT
f_SCL	Clock frequency⁽¹⁾		10	400	kHz
t_LOW	Clock low time⁽¹⁾		1.3		µs
t_HIGH	Clock high time⁽¹⁾		0.6		µs
t_HD;STA	Hold time (repeated) START condition⁽¹⁾	After this period, the first clock pulse is generated	0.6		µs
t_SU;STA	Set-up time for a repeated START condition⁽¹⁾		0.6		µs
t_HD;DAT	Data hold time⁽¹⁾⁽²⁾		0		ns
t_SU;DAT	Data setup time⁽¹⁾		100		ns
t_f	SDA fall time⁽¹⁾	IL ≤ 3mA; CL ≤ 400pF		300	ns
t_SU;STO	Set-up time for STOP condition⁽¹⁾		0.6		µs
t_BUF	Bus free time between a STOP and START condition⁽¹⁾		1.3		µs
t_VD;DAT	Data valid time⁽¹⁾			0.9	ns
t_VD;ACK	Data valid acknowledge time⁽¹⁾			0.9	ns
t_SP	Pulse width of spikes that must be suppressed by the input filter⁽¹⁾			50	ns