ZHCSDQ7 May   2015 HD3SS3212

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 简化电路原理图
  5. 5 修订历史记录
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 High-Speed Performance Parameters
    7. 8.7 Switching Characteristics
  9. 9 Parameter Measurement Information
  10. 10Detailed Description
    1. 10.1 Overview
    2. 10.2 Functional Block Diagram
    3. 10.3 Feature Description
      1. 10.3.1 Output Enable and Power Savings
    4. 10.4 Device Functional Modes
  11. 11Application and Implementation
    1. 11.1 Application Information
    2. 11.2 Typical Applications
      1. 11.2.1 Down Facing Port for USB3.1 Type C
        1. 11.2.1.1 Design Requirements
        2. 11.2.1.2 Detailed Design Procedure
        3. 11.2.1.3 Application Curves
      2. 11.2.2 Up Facing Port for USB3.1 Type C
      3. 11.2.3 PCIE/SATA/USB
      4. 11.2.4 PCIE/eSATA
      5. 11.2.5 USB/eSATA
      6. 11.2.6 MIPI Camera Serial Interface
  12. 12Power Supply Recommendations
  13. 13Layout
    1. 13.1 Layout Guidelines
    2. 13.2 Layout Example
  14. 14器件和文档支持
    1. 14.1 相关链接
    2. 14.2 社区资源
    3. 14.3 商标
    4. 14.4 静电放电警告
    5. 14.5 术语表
  15. 15机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8 Specifications

8.1 Absolute Maximum Ratings

see (1)
MIN MAX UNIT
VCC Supply voltage –0.5 4 V
Voltage Differential I/O –0.5 2.5
Control pins –0.5 VCC+ 0.5
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

8.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Supply voltage 3 3.6 V
Vih Input high voltage (SEL, OEn pins) 2 VCC V
Vil Input low voltage (SEL, OEn pins) –0.1 0.8 V
Vdiff High-speed signal pins differential voltage 0 1.8 Vpp
Vcm High speed signal pins common mode voltage 0 2 V
TA Operating free-air/ambient temperature HD3SS3212RKS 0 70 °C
HD3SS3212IRKS –40 85

8.4 Thermal Information

THERMAL METRIC(1) HD3SS3212 UNIT
RKS (VQFN)
20 PINS
RθJA Junction-to-ambient thermal resistance 46.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 41.8 °C/W
RθJB Junction-to-board thermal resistance 4.4 °C/W
ψJT Junction-to-top characterization parameter 17.6 °C/W
ψJB Junction-to-board characterization parameter 1.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 17.6 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

8.5 Electrical Characteristics

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ICC Device active current VCC = 3.3 V, OEn = 0 0.6 0.8 mA
ISTDN Device shutdown current VCC = 3.3 V, OEn = VCC 5 20 µA
CON Output ON capacitance 0.6 pF
COFF Output OFF capacitance 0.8 pF
RON Output ON resistance VCC = 3.3 V; VCM = 0 to 2 V; IO = –8 mA 5 8 Ω
ΔRON On-resistance match between pairs of the same channel VCC = 3.3 V; –0.35 V ≤ VIN ≤ 2.35 V; IO = –8 mA 0.5 Ω
RFLAT_ON On-resistance flatness RON(MAX) – RON(MAIN) VCC = 3.3 V; –0.35 V ≤ VIN ≤ 2.35 V 1 Ω
IIH,CTRL Input high current, control pins (SEL, OEn) 1 µA
IIL,CTRL Input low current, control pins (SEL, OEn) 1 µA
IIH,HS Input high current, high-speed pins [Ax/Bx/Cx][p/n] VIN = 2 V for selected port, A and B with SEL = 0, and A and C with SEL = VCC 1 µA
IIH,HS Input high current, high-speed pins [Ax/Bx/Cx][p/n] VIN = 2 V for non-selected port, C with SEL = 0, and B with SEL = VCC(1) 100 140 µA
IIL,HS Input low current, high-speed pins [Ax/Bx/Cx][p/n] 1 µA
(1) There is a 20-kΩ pull-down in non-selected port.

8.6 High-Speed Performance Parameters

PARAMETER TEST CONDITION MIN TYP MAX UNIT
IL Differential insertion loss ƒ = 0.3 MHz –0.5 dB
f = 0.625 MHz -0.55
ƒ = 2.5 GHz –0.8
ƒ = 4 GHz –1.4
ƒ = 5 GHz –1.6
BW –3-dB bandwidth 8 GHz
RL Differential return loss ƒ = 0.3 MHz –25 dB
ƒ = 2.5 GHz –13
ƒ = 4 GHz –13
ƒ = 5 GHz – 12
OIRR Differential OFF isolation ƒ = 0.3 MHz –75 dB
ƒ = 2.5 GHz –23
ƒ = 4 GHz –19
ƒ = 5 GHz –19
XTALK Differential crosstalk ƒ = 0.3 MHz –90 dB
ƒ = 2.5 GHz –35
ƒ = 4 GHz –32.5
ƒ = 5 GHz –32

8.7 Switching Characteristics

PARAMETER MIN TYP MAX UNIT
tPD Switch propagation delay (see Figure 3) 80 ps
tSW_ON Switching time SEL-to-Switch ON (see Figure 2) 0.5 µs
tSW_OFF Switching time SEL-to-Switch OFF (see Figure 2) 0.5 µs
tSK_INTRA Intra-pair output skew (see Figure 3) 6 ps
tSK_INTER Inter-pair output skew (see Figure 3) 20 ps
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