米6体育平台手机版

ZHCSTC7A September 2000 – January 2024 INA114

PRODUCTION DATA

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

P|8
DW|16

散热焊盘机械数据 (封装 | 引脚)

订购信息

5.5 Electrical Characteristics

at T_A = 25°C, V_S = ±15V, R_L = 2kΩ, V_REF = 0V, and G = 1 (unless otherwise noted)

PARAMETER		TEST CONDITIONS			MIN	TYP	MAX	UNIT
INPUT
V_OS	Offset voltage	RTI	INA114BP, BU			±10 + 20/G	±50 + 150/G	µV
V_OS	Offset voltage	RTI	INA114AP, AU			±25 + 30/G	±125 + 500/G	µV
	Offset voltage drift	T_A = –40°C to +85°C, RTI	INA114BP, BU			±0.1 + 0.5/G	±0.3 + 5/G	µV/℃
	Offset voltage drift	T_A = –40°C to +85°C, RTI	INA114AP, AU			±0.25 + 5/G	±1 + 10/G	µV/℃
	Long-term stability					±0.2 + 0.5/G		µV/mo
	Differential impedance					100 \|\| 6		GΩ \|\| pF
	Common-mode impedance					100 \|\| 6		GΩ \|\| pF
	Operating input voltage				(V–) + 4		(V+) – 4	V
PSRR	Power-supply rejection ratio	RTI, ±2.25V to ±18V				0.5 + 2/G	3 + 10/G	µV/V
CMRR	Common-mode rejection ratio	At dc to 60Hz, RTI, V_CM = ±10V, ΔR_S = 1kΩ	G = 1	INA114BP, BU	80	96		dB
			G = 1	INA114AP, AU	75	90		dB
			G = 10	INA114BP, BU	96	115
			G = 10	INA114AP, AU	90	106
			G = 100	INA114BP, BU	110	120
			G = 100	INA114AP, AU	106	110
			G = 1000	INA114BP, BU	115	120
			G = 1000	INA114AP, AU	106	110
BIAS CURRENT
I_B	Input bias current	V_CM = V_S / 2	INA114BP, BU			±0.5	±2	nA
I_B	Input bias current	V_CM = V_S / 2	INA114AP, AU			±0.5	±5	nA
	Input bias current drift	T_A = –40°C to +85°C	INA114BP, BU			±8		pA/℃
	Input bias current drift	T_A = –40°C to +85°C	INA114AP, AU			±8		pA/℃
I_OS	Input offset current	V_CM = V_S / 2	INA114BP, BU			±0.5	±2	nA
I_OS	Input offset current	V_CM = V_S / 2	INA114AP, AU			±0.5	±5	nA
	Input offset current drift	T_A = –40°C to +85°C	INA114BP, BU			±8		pA/℃
	Input offset current drift	T_A = –40°C to +85°C	INA114AP, AU			±8		pA/℃
NOISE VOLTAGE
	Voltage noise	G = 1000, R_S = 0Ω	f = 10Hz			15		nV/√Hz
			f = 100Hz			11
			f = 1kHz			11
			f_B = 0.1Hz to 10Hz			0.4		µV_PP
	Noise current	f = 10Hz				0.4		pA/√Hz
		f = 1kHz				0.2		pA/√Hz
		f_B = 0.1Hz to 10Hz				18		pA_PP
GAIN
G	Gain equation				1 + (50kΩ / R_G)			V/V
	Range of gain				1		10000	V/V
GE	Gain error	V_O = ±10V, G = 1				±0.01	±0.05	%
		V_O = ±10V	G = 10	INA114BP, BU		±0.02	±0.4
			G = 10	INA114AP, AU		±0.02	±0.5
			G = 100	INA114BP, BU		±0.05	±0.5
			G = 100	INA114AP, AU		±0.05	±0.7
			G = 1000	INA114BP, BU		±0.5	±1
			G = 1000	INA114AP, AU		±0.5	±2
	Gain drift					±2	±10	ppm/°C
	Gain drift	R_S = 50kΩ⁽¹⁾				±25	±100	ppm/°C
	Gain nonlinearity	V_O = –10V to +10V	G = 1	INA114BP, BU		±0.0001	±0.001	% of FSR
			G = 1	INA114AP, AU		±0.0001	±0.002
			G = 10, 100	INA114BP, BU		±0.0005	±0.002
			G = 10, 100	INA114AP, AU		±0.0005	±0.004
			G = 1000	INA114BP, BU		±0.002	±0.01
			G = 1000	INA114AP, AU		±0.002	±0.02
OUTPUT
	Output voltage	I_O = 5mA, T_A = –40°C to 85°C			(V–) +1.5		(V+) –1.5	V
			V_S = ±11.4V		(V–) + 1.4		(V+) – 1.4
			V_S = ±2.25V		(V–) +1		(V+) – 1
	Load capacitance stability					1000		pF
I_SC	Short-circuit current	Continuous to V_S / 2				+20 / –15		mA
FREQUENCY RESPONSE
BW	Bandwidth, –3dB	G = 1				1		MHz
		G = 10				100		kHz
		G = 100				10
		G = 1000				1
SR	Slew rate	G = 10, V_O = ±10V			0.3	0.6		V/µs
t_S	Settling time	0.01%, V_STEP = 10V	G = 1			18		µs
			G = 10			20
			G = 100			120
			G = 1000			1100
	Overload recovery	50% overdrive				20		µs
POWER SUPPLY
I_Q	Quiescent current	V_S = ±2.25V to ±18V, V_IN = 0V				±2.2	±3	mA

(1) Temperature coefficient of the "50kΩ" term in the gain equation.