米6体育平台手机版

ZHCSW26B September 2000 – April 2024 INA117

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

5.5 Electrical Characteristics

at T_A = 25°C, V_S = ±15V, R_L = 10kΩ, V_REF = 0V, V_CM = V_S/2, and G = 1 (unless otherwise noted)

PARAMETER		TEST CONDITIONS	TEST CONDITIONS	MIN	TYP	MAX	UNIT
INPUT
V_OS	Offset voltage	RTO (P package)			120	1000	µV
V_OS	Offset voltage	RTO (KU package)			600	2000	µV
	Offset voltage drift	RTO, T_A= –40℃ to 85℃			8.5		µV/°C
	Long term drift				200		µV/mo
PSRR	Power-supply rejection ratio	RTO, V_S = ±5V to ±18V		74	90		dB
	Common-mode voltage ⁽¹⁾			–200		200	V
	Differential voltage			–10		10	V
CMRR	Common-mode voltage rejection	DC, V_CM = –200V to 200V		70	80		dB
		DC, V_CM = –200V to 200V	T_A= –40℃ to 85℃		75
		AC, 60Hz, V_CM = –200V to 200V		66	80
	Differential input impedance				800		kΩ
	Common-mode input impedance				200		kΩ
NOISE
e_N	Voltage noise	RTO, f_B = 0.1Hz to 10Hz			25		µV_PP
e_N	Voltage noise	RTO, f = 1kHz			550		nV/√Hz
GAIN
GE	Gain error				±0.01	±0.05	%
	Gain error drift	T_A = –40°C to 85°C			±2		ppm/°C
	Gain nonlinearity⁽²⁾				±0.0005	±0.001	% of FSR
OUTPUT
	Output voltage	I_O= 20mA, –5mA		10	12		V
	Output impedance				0.01		Ω
C_L	Load capacitance	Stable operation			1		nF
	Short-circuit current	Continuous to V_S/2			49, –13		mA
FREQUENCY RESPONSE
BW	Bandwidth, –3dB				200		kHz
	Full power bandwidth	V_O = 20V_pp		30			kHz
SR	Slew rate			1.7	2.6		V/µs
t_S	Settling time	To 0.1%,	V_O = 10V step		6.5		µs
		To 0.01%	V_O = 10V step		10
		To 0.01%	V_CM = 10V step, V_DIFF = 0V		4.5
POWER SUPPLY
I_Q	Quiescent current	V_IN = 0V			1.5	±2	mA

(2) Input common-mode voltage varies with output voltage; see Typical Characteristics.

(3) Specified by wafer test.