米6体育平台手机版

ZHCSHG8F October 1995 – May 2022 INA128 , INA129

PRODUCTION DATA

封装选项

机械数据 (封装 | 引脚)

D|8
- MSOI002K
P|8
- MPDI001B

散热焊盘机械数据 (封装 | 引脚)

订购信息

7.5 Electrical Characteristics

at T_A = 25°C, V_S = ±15 V, R_L = 10 kΩ, V_REF = 0 V, V_CM = V_S / 2, and G = 1 (unless otherwise noted)

PARAMETER		TEST CONDITIONS			MIN	TYP	MAX	UNIT
INPUT
V_OS	Offset voltage (RTI)	1 ≤ G ≤ 10000	INA12xP, INA12xU			±10 ±100 / G	±50 ±500 / G	µV
V_OS	Offset voltage (RTI)	1 ≤ G ≤ 10000	INA12xPA, INA12xUA			±25 ±100 / G	±125 ±1000 / G	µV
	Offset voltage drift (RTI)	T_A = –40°C to +85°C	INA12xP, INA12xU			±0.2 ±2 / G	±0.5 ±20 / G	µV/°C
	Offset voltage drift (RTI)	T_A = –40°C to +85°C	INA12xPA, INA12xUA			±0.2 ±5 / G	±1 ±20 / G	µV/°C
PSRR	Power-supply rejection ratio (RTI)	V_S = ±2.25 V to ±18 V	INA12xP, INA12xU			±0.2 ±20 / G	±1 ±100 / G	µV/V
PSRR	Power-supply rejection ratio (RTI)	V_S = ±2.25 V to ±18 V	INA12xPA, INA12xUA				±2 ±200 / G	µV/V
	Long-term stability					±0.2 ±3 / G		µV/mo
	Input impedance	Differential				10 \|\| 2		GΩ \|\| pF
	Input impedance	Common-mode				100 \|\| 9		GΩ \|\| pF
V_CM	Common-mode voltage(2)	V_O = 0 V			(V–) + 2		(V+) – 2	V
	Safe input voltage	R_S = 0 Ω					±40	V
CMRR	Common-mode rejection ratio	ΔR_S = 1 kΩ, V_CM = ±13 V	G = 1	INA12xP, INA12xU	80	86		dB
			G = 1	INA12xPA, INA12xUA	73
			G = 10	INA12xP, INA12xU	100	106
			G = 10	INA12xPA, INA12xUA	93
			G = 100	INA12xP, INA12xU	120	125
			G = 100	INA12xPA, INA12xUA	110
			G = 1000	INA12xP, INA12xU	120	130
			G = 1000	INA12xPA, INA12xUA	110
INPUT BIAS CURRENT
I_B	Input bias current	INA12xP, INA12xU				±2	±5	nA
I_B	Input bias current	INA12xPA, INA12xUA					±10	nA
	Input bias current drift	T_A = –40°C to +85°C				±30		pA/℃
I_OS	Input offset current	INA12xP, INA12xU				±1	±5	nA
I_OS	Input offset current	INA12xPA, INA12xUA					±10	nA
	Input offset current drift	T_A = –40°C to +85°C				±30		pA/℃
NOISE
e_N	Voltage noise (RTI)	G = 1000, R_S = 0 Ω	f = 10 Hz			10		nV/√Hz
			f = 100 Hz			8
			f = 1 kHz			8
			f_B = 0.1 Hz to 10 Hz			0.2		µV_PP
I_n	Current noise	f = 10 Hz				0.9		pA/√Hz
		f = 1 kHz				0.3		pA/√Hz
		f_B= 0.1 Hz to 10 Hz				30		pA_PP
GAIN
	Gain equation	INA128			1 + (50 kΩ / R_G)			V/V
	Gain equation	INA129			1 + (49.4 kΩ / R_G)			V/V
G	Gain				1		10000	V/V
GE	Gain error	G = 1	INA12xP, INA12xU			±0.01	±0.024	%
		G = 1	INA12xPA, INA12xUA				±0.1
		G = 10	INA12xP, INA12xU			±0.02	±0.4
		G = 10	INA12xPA, INA12xUA				±0.5
		G = 100	INA12xP, INA12xU			±0.05	±0.5
		G = 100	INA12xPA, INA12xUA				±0.7
		G = 1000	INA12xP, INA12xU			±0.5	±1
		G = 1000	INA12xPA, INA12xUA				±2
	Gain drift(6)	T_A = –40°C to +85°C				±1	±10	ppm/°C
	Gain drift(6)	T_A = –40°C to +85°C	50-kΩ or 49.4-kΩ resistance(3)			±25	±100	ppm/°C
	Gain nonlinearity⁽¹⁾	G = 1, V_O = ±13.6 V	INA12xP, INA12xU			±0.0001	±0.001	% of FSR
		G = 1, V_O = ±13.6 V	INA12xPA, INA12xUA				±0.002
		G = 10	INA12xP, INA12xU			±0.0003	±0.002
		G = 10	INA12xPA, INA12xUA				±0.004
		G = 100	INA12xP, INA12xU			±0.0005	±0.002
		G = 100	INA12xPA, INA12xUA				±0.004
		G = 1000				±0.001
OUTPUT
	Positive output voltage swing				(V+) – 1.4			V
	Negative output voltage swing				(V–) + 1.4			V
C_L	Load capacitance	Stable operation				1000		pF
I_SC	Short-circuit current	Continuous to V_S / 2				+6/–15		mA
FREQUENCY RESPONSE
BW	Bandwidth, –3 dB	G = 1				1.3		MHz
		G = 10				640		kHz
		G = 100				200
		G = 1000				20
SR	Slew rate	G = 5, V_O = ±10 V				1.2		V/µs
t_S	Settling time	To 0.01%	G = 1			12		µs
			G = 10			12
			G = 100			12
			G = 1000			80
	Overload recovery	50% input overload				4		µs
POWER SUPPLY
I_Q	Quiescent current	V_IN = 0 V				±700	±750	µA

(1) Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%

(2) Input common-mode voltage varies with output voltage; see Typical Characteristics.

(3) Temperature coefficient of the 50-kΩ or 49.4-kΩ term in the gain equation.

(4) Specified by wafer test.