ZHCSHG8F October   1995  – May 2022 INA128 , INA129

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Noise Performance
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Input Common-Mode Range
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Setting the Gain
        2. 9.2.2.2 Dynamic Performance
        3. 9.2.2.3 Offset Trimming
        4. 9.2.2.4 Input Bias Current Return Path
      3. 9.2.3 Application Curves
    3. 9.3 System Examples
  10. 10Power Supply Recommendations
    1. 10.1 Low-Voltage Operation
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
        1. 12.1.1.1 PSpice® for TI
        2. 12.1.1.2 TINA-TI™ Simulation Software (Free Download)
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.4 Thermal Information

THERMAL METRIC(1) INA12x UNIT
D (SOIC) P (PDIP)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 110 46.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 57 34.1 °C/W
RθJB Junction-to-board thermal resistance 54 23.4 °C/W
ψJT Junction-to-top characterization parameter 11 11.3 °C/W
ψJB Junction-to-board characterization parameter 53 23.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
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