米6体育平台手机版

ZHCSTR6A September 1999 – November 2023 INA146

PRODUCTION DATA

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散热焊盘机械数据 (封装 | 引脚)

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5.5 Electrical Characteristics V_S = ±2.25 V to ±18 V

at T_A = 25°C, V_S = ±2.25 V to ±18 V, R_L = 10 kΩ, V_REF = 0 V, V_CM = V_S / 2, and G = 0.1 (unless otherwise noted)

PARAMETER		TEST CONDITIONS	TEST CONDITIONS	MIN	TYP	MAX	UNIT
INPUT
V_OS	Offset voltage, V_O	RTI, V_S = ±15 V, V_CM = 0 V			±1	±5	mV
	Offset voltage, V_O1	RTI			±1		mV
	Offset voltage drift	RTI, T_A= –40℃ to 85℃			±10		µV/°C
PSRR	Power-supply rejection ratio	RTI, V_S = ±1.35 V to ±18 V			±100	±600	µV/V
V_CM	Common-mode voltage ⁽¹⁾	V_S = ±15 V, V_IN = 0 V		–100		100	V
CMRR	Common-mode voltage rejection	RTI, 11 (–V_S) < V_CM< 11 (V_S -1) , R_S = 0 Ω		70	80		dB
CMRR	Common-mode voltage rejection	T_A= –40℃ to 85℃		64	74		dB
	Differential input impedance	Non-inverting input			110		kΩ
	Differential input impedance	Inverting input			91.7		kΩ
	Common-mode input impedance				55		kΩ
BIAS CURRENT
I_B	Bias Current	V_CM = V_S / 2			±50		nA
I_OS	Offset Current				±5		nA
NOISE
e_N	Voltage noise	RTI, f_B = 0.1 Hz to 10 Hz			12		µV_PP
e_N	Voltage noise	RTI, f = 1 kHz			550		nV/√Hz
GAIN
	Gain			0.1		100	V/V
GE	Gain error	V_O = (V–) + 0.15 V to (V+) – 1 V, R_L = 100 kΩ, G = 1			±0.025	±0.1	%
GE	Gain error	V_O = (V–) + 0.3 V to (V+) – 1.25 V, R_L = 10 kΩ, G = 1			±0.025	±0.1	%
	Gain error drift⁽²⁾	T_A = –40°C to 85°C	V_O = (V–) + 0.25 V to (V+) – 1 V, R_L = 100 kΩ, G = 1		±1	±10	ppm/°C
	Gain error drift⁽²⁾	T_A = –40°C to 85°C	V_O = (V–) + 0.5 V to (V+) – 1.25 V, R_L = 10 kΩ, G = 1		±1	±10	ppm/°C
	Gain nonlinearity	V_O = (V–) + 0.3 V to (V+) – 1.25 V, G = 1			±0.001	±0.01	% of FSR
OUTPUT
	Output voltage	R_L= 100 kΩ, G = 1		(V–) + 0.15		(V+) – 1	V
		R_L= 100 kΩ, G = 1	T_A= –40℃ to 85℃	(V–) + 0.25		(V+) – 1
		R_L= 10 kΩ, G = 1		(V–) + 0.3		(V+) – 1.25
		R_L= 10 kΩ, G = 1	T_A= –40℃ to 85℃	(V–) + 0.5		(V+) – 1.25
C_L	Load capacitance	Stable operation			1		nF
I_SC	Short-circuit current	Continuous to V_S / 2			±15		mA
FREQUENCY RESPONSE
BW	Bandwidth, –3 dB	G = 0.1			550		kHz
BW	Bandwidth, –3 dB	G = 1			50		kHz
SR	Slew rate				0.3		V/µs
t_S	Settling time	To 0.1%,	V_O = 10 V-step		40		µs
t_S	Settling time	To 0.01%	V_O = 10 V-step		80		µs
	Overload recovery	50% input overload			40		µs
POWER SUPPLY
I_Q	Quiescent current	V_IN = 0 V			±570	±700	µA
I_Q	Quiescent current	T_A= –40℃ to 85℃				±750	µA

(1) Input common-mode voltage varies with output voltage; see Typical Characteristics.

(2) Specified by wafer test.

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机械数据 (封装 | 引脚)

散热焊盘机械数据 (封装 | 引脚)

订购信息

5.5 Electrical Characteristics VS = ±2.25 V to ±18 V

5.5 Electrical Characteristics V_S = ±2.25 V to ±18 V