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SBOS472B March 2009 – June 2016 INA148-Q1

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
Supply voltage	V+ to V–		36	V
Input voltage	Continuous		±200	V
Input voltage	Peak (0.1 s)		±500	V
Short circuit to ground duration		Continuous
Package thermal impedance, junction to free air			97.1	°C/W
Operating free-air temperature		–40	125	°C
Maximum operating virtual-junction temperature			150	°C
Lead temperature (soldering, 10 s)			300	°C
Storage temperature, T_stg		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per AEC Q100-002⁽¹⁾	±1500	V
		Charged-device model (CDM), per AEC Q100-011	±2000
		Machine model	±150

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

			MIN	MAX	UNIT
V_S	Supply voltage	Single supply	2.7	36	V
V_S	Supply voltage	Dual supply	±1.35	±18	V
T_A	Operating free-air temperature		–40	125	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		INA148-Q1	UNIT
		D (SOIC)
		8 PINS
R_θJA	Junction-to-ambient thermal resistance	100.6	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	44.9	°C/W
R_θJB	Junction-to-board thermal resistance	42.2	°C/W
ψ_JT	Junction-to-top characterization parameter	6.3	°C/W
ψ_JB	Junction-to-board characterization parameter	41.5	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics Dual Supply

V_S = ±5 V to ±15 V (dual supply), R_L = 10 kΩ to ground, V_REF = 0 V, T_A = 25°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
V_OS	Input offset voltage⁽¹⁾⁽²⁾	V_CM = 0 V	V_S = ±15 V		±1	±5	mV
V_OS	Input offset voltage⁽¹⁾⁽²⁾	V_CM = 0 V	V_S = ±5 V		±1	±5	mV
ΔV_OS/ΔT	Input offset voltage drift⁽¹⁾	T_A = –40°C to 125°C			±10		μV/°C
PSRR	Power supply ripple rejection⁽¹⁾	V_S = ±1.35 V to ±18 V, V_CM = 0 V			±50	±400	μV/V
V_CM	Common-mode voltage range	V_+IN – V_–IN = 0	V_S = ±15 V	–200		200	V
V_CM	Common-mode voltage range	V_+IN – V_–IN = 0	V_S = ±5 V	–100		80	V
CMRR	Common-mode rejection ratio	V_S = ±15 V, V_CM = –200 V to 200 V, R_S = 0 Ω		70	86		dB
CMRR	Common-mode rejection ratio	V_S = ±5 V, V_CM = –100 V to 80 V, R_S = 0 Ω		70	86		dB
	Differential input impedance				2		MΩ
	Common-mode input impedance				1		MΩ
V_n	Voltage noise⁽¹⁾⁽³⁾	f = 0.1 Hz to 10 Hz			17		μV_p-p
	Voltage noise density⁽¹⁾⁽³⁾	f = 1 kHz			880		nV/√Hz
	Initial gain⁽¹⁾				1		V/V
	Gain error	V_O = (V– + 0.5) to (V+ – 1.5)			±0.01%	±0.075%
	Gain error over temperature				±3	±10	ppm/°C
	Gain nonlinearity	V_O = (V– + 0.5) to (V+ – 1.5)	V_S = ±15 V		±0.001	±0.002	%FSR
	Gain nonlinearity	V_O = (V– + 0.5) to (V+ – 1.5)	V_S = ±5 V		±0.001		%FSR
	Small-signal bandwidth frequency response				100		kHz
SR	Slew rate				1		V/μs
t_s	Settling time	V_S = ±15 V, 10-V step	0.1%		21		μs
		V_S = ±15 V, 10-V step	0.01%		25
		V_S = ±5 V, 6-V step	0.1%		21
		V_S = ±5 V, 6-V step	0.01%		25
	Overload recovery	50% input overload			24		μs
V_O	Output voltage	R_L = 100 kΩ		V– + 0.25		V+ – 1	V
V_O	Output voltage	R_L = 10 kΩ		V– + 0.5		V+ – 1.5	V
I_O	Output current	Short-circuit current, continuous to common			±13		mA
C_L	Load capacitance	Stable operation			10		nF
I_S	Supply current	V_IN = 0, I_O = 0			±260	±300	μA

(1) Overall difference amplifier configuration. Referred to input pins (V_+IN and V_–IN ), gain = 1 V/V.

(2) Includes effects of amplifier's input bias and offset currents.

(3) Includes effects of input current noise and thermal noise contribution of resistor network.

6.6 Electrical Characteristics Single Supply

V_S = 5 V (single supply), R_L = 10 kΩ to V_S / 2, V_REF = V_S / 2, T_A = 25°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
V_OS	Input offset voltage⁽¹⁾⁽²⁾	V_CM = V_S / 2			±1	±5	mV
ΔV_OS/ΔT	Input offset voltage drift⁽¹⁾	T_A = –40°C to 125°C			±10		μV/°C
PSRR	Power supply ripple rejection⁽¹⁾	V_S = 2.7 V to 36 V, V_CM = V_S / 2			±50	±400	μV/V
V_CM	Common-mode voltage range	V_+IN – V_–IN = 0	V_REF = 0.25 V	–4		75	V
V_CM	Common-mode voltage range	V_+IN – V_–IN = 0	V_REF = V_S / 2	–47.5		32.5	V
CMRR	Common-mode rejection ratio	V_CM = –47.5 V to 32.5 V, R_S = 0 Ω		70	86		dB
	Differential input impedance				2		MΩ
	Common-mode input impedance				1		MΩ
V_n	Voltage noise⁽¹⁾⁽³⁾	f = 0.1 Hz to 10 Hz			17		μV_p-p
	Voltage noise density⁽¹⁾⁽³⁾	f = 1 kHz			880		nV/√Hz
	Initial gain⁽¹⁾				1		V/V
	Gain error	V_O = 0.5 V to 3.5 V			±0.01%	±0.075%
	Gain error over temperature				±3	±10	ppm/°C
	Gain nonlinearity	V_O = 0.5 V to 3.5 V			±0.001		%FSR
	Small-signal bandwidth				100		kHz
SR	Slew rate				1		V/μs
t_s	Settling time	V_S = 5 V, 3-V step	0.1%		21		μs
t_s	Settling time	V_S = 5 V, 3-V step	0.01%		25		μs
	Overload recovery	50% input overload			13		μs
V_O	Output voltage	R_L = 100 kΩ		V– + 0.25		V+ – 1	V
V_O	Output voltage	R_L = 10 kΩ		V– + 0.5		V+ – 1.5	V
I_O	Output current	Short-circuit current, continuous to common			±8		mA
C_L	Load capacitance	Stable operation			10		nF
I_Q	Quiescent current	V_IN = 0, I_O = 0			260	300	μA