SGLS185F September   2003  – May 2016 INA139-Q1 , INA169-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Output Voltage Range
      2. 7.3.2 Bandwidth
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Operation
    2. 8.2 Typical Applications
      1. 8.2.1 Buffering Output to Drive an ADC
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Selecting RS and RL
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Output Filter
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curve
      3. 8.2.3 Offsetting the Output Voltage
      4. 8.2.4 Bipolar Current Measurement
        1. 8.2.4.1 Application Curve
      5. 8.2.5 Bipolar Current Measurement Using Differential Input of the ADC
      6. 8.2.6 Multiplexed Measurement Using Logic Signal for Power
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Related Documentation
    2. 11.2 Related Links
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
  • PW|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Voltage Supply, V+ INA139-Q1 –0.3 60 V
INA169-Q1 –0.3 75 V
Analog inputs, VIN+, VIN– Common mode INA139-Q1 –0.3 60 V
INA169-Q1 –0.3 75 V
Differential, (VIN+) – (VIN–) –40 2 V
Analog output, OUT –0.3 40 V
Temperature Operating, TA –55 125 °C
Junction, TJ 150 °C
Storage, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 ±1000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Supply voltage, V+ INA139-Q1 2.7 5 40 V
INA169-Q1 2.7 5 60 V
Common mode voltage INA139-Q1 2.7 12 40 V
INA169-Q1 2.7 12 60 V
Operating temperature, TA –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) INA1x9-Q1 UNIT
PW (TSSOP)
8 PINS
RθJA Junction-to-ambient thermal resistance 179.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 62.6 °C/W
RθJB Junction-to-board thermal resistance 107.7 °C/W
ψJT Junction-to-top characterization parameter 7 °C/W
ψJB Junction-to-board characterization parameter 106 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

at TA = −40°C to +125°C, V+ = 5 V, VIN+ = 12 V, and RL = 25 kΩ (unless otherwise noted)
PARAMETER TEST CONDITIONS INA139-Q1 INA169-Q1 UNIT
MIN TYP MAX MIN TYP MAX
INPUT
Full-scale sense voltage VSENSE = VIN+ − VIN− 100 500 100 500 mV
Common-mode rejection VIN+ = 2.7 V to 40 V, VSENSE = 50 mV 100 115 dB
VIN+ = 2.7 V to 60 V, VSENSE = 50 mV 100 120
Offset voltage(1) RTI ±0.2 ±2 ±0.2 ±2 mV
Offset voltage vs temperature 1 1 μV/°C
Offset voltage vs power supply (V+) VIN+ = 2.7 V to 40 V, VSENSE = 50 mV 0.5 10 μV/V
VIN+ = 2.7 V to 60 V, VSENSE = 50 mV 0.1 10
Input bias current 10 10 μA
OUTPUT
Transconductance VSENSE = 10 mV to 150 mV 980 1000 1020 980 1000 1020 μA/V
Transconductance versus temperature VSENSE = 100 mV 10 10 nA/°C
Nonlinearity error VSENSE = 10 mV to 150 mV ±0.01% ±0.2% ±0.01% ±0.2%
Total output error VSENSE = 100 mV ±0.5% ±2% ±0.5% ±2%
Output impedance 1 || 5 1 || 5 GΩ || pF
Voltage output swing to power supply (V+) (V+) − 0.9 (V+) − 1.2 (V+) − 0.9 (V+) − 1.2 V
Voltage output swing to common mode, VCM VCM − 0.6 VCM − 1 VCM − 0.6 VCM − 1 V
FREQUENCY RESPONSE
Bandwidth RL = 10 kΩ 440 440 kHz
RL = 20 kΩ 220 220
Settling time (0 1%) 5 V step, RL = 10 kΩ 2.5 2.5 μs
5 V step, RL = 20 kΩ 5 5
NOISE
Output-current noise density 20 20 pA/√Hz
Total output-current noise BW = 100 kHz 7 7 nA RMS
POWER SUPPLY
Quiescent current VSENSE = 0 V, IO = 0 mA 60 125 60 125 μA
(1) Defined as the amount of input voltage, VSENSE, to drive the output to zero.

6.6 Typical Characteristics

at TA = 25°C, V+ = 5 V, VIN+ = 12 V, and RL = 25 kΩ (unless otherwise noted)
INA139-Q1 INA169-Q1 typ_fig01_gls185.gif
Figure 1. Gain vs Frequency
INA139-Q1 INA169-Q1 typ_fig03_gls185.gif
Figure 3. Power-Supply Rejection vs Frequency
INA139-Q1 INA169-Q1 typ_fig05_gls185.gif
Figure 5. Total Output Error vs Power-Supply Voltage
INA139-Q1 INA169-Q1 typ_fig07_gls185.gif
Figure 7. Step Response
INA139-Q1 INA169-Q1 typ_fig02_gls185.gif
Figure 2. Common-Mode Rejection vs Frequency
INA139-Q1 INA169-Q1 g_ttlouterr_vin_gls174.gif
Figure 4. Total Output Error vs VIN
INA139-Q1 INA169-Q1 typ_fig06_gls185.gif
Figure 6. Quiescent Current vs Power-Supply Voltage
INA139-Q1 INA169-Q1 typ_fig08_gls185.gif
Figure 8. Step Response
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