ZHCST11 February   2024 INA185-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagrams
    3. 6.3 Feature Description
      1. 6.3.1 High Bandwidth and Slew Rate
      2. 6.3.2 Bidirectional Current Monitoring
      3. 6.3.3 Wide Input Common-Mode Voltage Range
      4. 6.3.4 Precise Low-Side Current Sensing
      5. 6.3.5 Rail-to-Rail Output Swing
    4. 6.4 Device Functional Modes
      1. 6.4.1 Normal Mode
      2. 6.4.2 Unidirectional Mode
      3. 6.4.3 Bidirectional Mode
      4. 6.4.4 Input Differential Overload
      5. 6.4.5 Shutdown Mode
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Basic Connections
      2. 7.1.2 RSENSE and Device Gain Selection
      3. 7.1.3 Signal Filtering
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curve
    3. 7.3 Power Supply Recommendations
      1. 7.3.1 Common-Mode Transients Greater Than 26V
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 接收文档更新通知
    4. 8.4 支持资源
    5. 8.5 Trademarks
    6. 8.6 静电放电警告
    7. 8.7 术语表
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

5.5 Electrical Characteristics

at TA = 25°C, VSENSE = VIN+ – VIN–, VS = 5V, VREF = VS / 2, and VIN+ = 12V (unless otherwise noted)
PARAMETER CONDITIONS MIN TYP MAX UNIT
INPUT
CMRR Common-mode rejection ratio, RTI (1) VIN+ = 0V to 26V, VSENSE = 0mV,
TA = –40°C to 125°C		 A1 device 86 100 dB
A2, A3 devices 96 100
A4 devices 106 120
VOS Offset voltage, RTI  VSENSE = 0mV, VIN+ = 0V A1 devices ±25 ±135 μV
A2, A3, A4 devices ±5 ±55
VSENSE = 0mV, VIN+ = 12V A1 devices ±100 ±450
A2, A3 devices ±25 ±130
A4 device ±25 ±100
dVOS/dT Offset drift, RTI VSENSE = 0mV, TA = –40°C to 125°C 0.2 0.5 μV/°C
PSRR Power supply rejection ratio, RTI VS = 2.7V to 5.5V, VIN+ = 12V, VSENSE = 0mV ±8 ±30 μV/V
IIB Input bias current VSENSE = 0mV, VCM = 0V -6 μA
VSENSE = 0mV 75
IIO Input offset current VSENSE = 0mV ±0.05 μA
OUTPUT
G Gain A1 devices 20 V/V
A2 devices 50
A3 devices 100
A4 devices 200
EG Gain error VOUT = 0.5V to VS – 0.5V,
TA = –40°C to 125°C		 A1, A2, A3 devices ±0.05% ±0.2%
A4 device ±0.07% ±0.25%
Gain error drift TA = –40°C to 125°C 1.5 8 ppm/°C
Nonlinearity error VOUT = 0.5V to VS – 0.5V ±0.01%
Maximum capacitive load No sustained oscillation 1 nF
VOLTAGE OUTPUT (2)
VSP Swing to VS RL = 10kΩ to GND, TA = –40°C to 125°C (V+) – 0.02 (V+) – 0.026 V
VSN Swing to GND RL = 10kΩ to GND, VIN+ – VIN– = –10mV,
TA = –40°C to 125°C		 (VGND) + 0.0005 (VGND) + 0.0035 V
VSG Zero current swing to GND RL = Open, VIN+ – VIN– = 0mV,
VREF = 0 V, TA = –40°C to 125°C		 A1 devices (VGND) + 0.0005 (VGND) + 0.006 V
A2, A3, A4 devices (VGND) + 0.0005 (VGND) + 0.012
FREQUENCY RESPONSE
BW Bandwidth CLOAD = 10pF A1 devices 350 kHz
A2 devices 210
A3 devices 150
A4 devices 105
SR Slew rate 2 V/μs
NOISE, RTI (1)
Voltage noise density 40 nV/√Hz
POWER SUPPLY
IQ Quiescent current VSENSE = 0mV 200 260 μA
VSENSE = 0mV, TA = –40°C to 125°C 300
(1) RTI = referred-to-input.
(2) See Typical Characteristic curve, Output Voltage Swing vs Output Current
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