ZHCSNH7 May   2022 INA190-EP

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Precision Current Measurement
      2. 7.3.2 Low Input Bias Current
      3. 7.3.3 Low Quiescent Current With Output Enable
      4. 7.3.4 Bidirectional Current Monitoring
      5. 7.3.5 High-Side and Low-Side Current Sensing
      6. 7.3.6 High Common-Mode Rejection
      7. 7.3.7 Rail-to-Rail Output Swing
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Unidirectional Mode
      3. 7.4.3 Bidirectional Mode
      4. 7.4.4 Input Differential Overload
      5. 7.4.5 Shutdown
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Basic Connections
      2. 8.1.2 RSENSE and Device Gain Selection
      3. 8.1.3 Signal Conditioning
      4. 8.1.4 Common-Mode Voltage Transients
    2. 8.2 Typical Applications
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.4 Thermal Information

THERMAL METRIC(1) INA190EP UNIT
DDF (SOT23)
8 PINS
RθJA Junction-to-ambient thermal resistance 164.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 86.6 °C/W
RθJB Junction-to-board thermal resistance 84.3 °C/W
ΨJT Junction-to-top characterization parameter 7.1 °C/W
ΨJB Junction-to-board characterization parameter 83.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |