ZHCSDE7A February 2015 – March 2021 INA225-Q1
PRODUCTION DATA
PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
INPUT | |||||||
VCM | Common-mode input range | TA = –40 °C to +125 °C | 0 | 36 | V | ||
CMR | Common-mode rejection | VIN+ = 0 V to +36
V, VSENSE = 0 mV, TA = –40 °C to +125 °C | 95 | 105 | dB | ||
VOS | Offset voltage, RTI(1) | VSENSE = 0 mV | ±75 | ±150 | μV | ||
dVOS/dT | RTI vs. temperature | TA = –40 °C to +125 °C | 0.2 | 0.5 | μV/°C | ||
PSRR | Power-supply rejection ratio | VSENSE = 0 mV, VREF = 2.5 V, VS = 2.7 V to 36 V | ±0.1 | ±1 | μV/V | ||
IB | Input bias current | VSENSE = 0 mV | 55 | 72 | 85 | μA | |
IOS | Input offset current | VSENSE = 0 mV | ±0.5 | μA | |||
VREF | Reference input range | TA = –40 °C to +125 °C | 0 | VS | V | ||
OUTPUT | |||||||
G | Gain | 25, 50, 100, 200 | V/V | ||||
EG | Gain error | Gain = 25 V/V and 50 V/V,
VOUT = 0.5 V to VS – 0.5 V, TA = –40 °C to +125 °C | ±0.05% | ±0.15% | |||
Gain = 100 V/V,
VOUT = 0.5 V to VS – 0.5 V,
TA = –40 °C to +125 °C | ±0.1% | ±0.2% | |||||
Gain = 200 V/V,
VOUT = 0.5 V to VS – 0.5 V,
TA = –40 °C to +125 °C | ±0.1% | ±0.3% | |||||
Gain error vs. temperature | G = 25 V/V, 50 V/V, 100 V/V,
TA = –40 °C to +125 °C | 3 | 10 | ppm/°C | |||
G = 200 V/V, TA = –40 °C to +125 °C | 5 | 15 | |||||
Nonlinearity error | VOUT = 0.5 V to VS – 0.5 V | ±0.01% | |||||
Maximum capacitive load | No sustained oscillation | 1 | nF | ||||
VOLTAGE OUTPUT(2) | |||||||
Swing to VS power-supply rail | RL = 10 kΩ to GND, TA = –40 °C to +125 °C | VS – 0.05 | VS – 0.2 | V | |||
Swing to GND(3) | VREF =
VS / 2, all gains, RL = 10
kΩ to GND, TA = –40 °C to +125 °C | VGND + 5 | VGND + 10 | mV | |||
VREF = GND, gain =
25 V/V, RL = 10 kΩ to GND, TA = –40 °C to +125 °C | VGND + 7 | mV | |||||
VREF = GND, gain =
50 V/V, RL = 10 kΩ to GND, TA = –40 °C to +125 °C | VGND + 15 | mV | |||||
VREF = GND, gain =
100 V/V, RL = 10 kΩ to GND, TA = –40 °C to +125 °C | VGND + 30 | mV | |||||
VREF = GND, gain =
200 V/V, RL = 10 kΩ to GND, TA = –40 °C to +125 °C | VGND + 60 | mV | |||||
FREQUENCY RESPONSE | |||||||
BW | Bandwidth | Gain = 25 V/V, CLOAD = 10 pF | 250 | kHz | |||
Gain = 50 V/V, CLOAD = 10 pF | 200 | kHz | |||||
Gain = 100 V/V, CLOAD = 10 pF | 125 | kHz | |||||
Gain = 200 V/V, CLOAD = 10 pF | 70 | kHz | |||||
SR | Slew rate | 0.4 | V/μs | ||||
NOISE, RTI(1) | |||||||
Voltage noise density | 50 | nV/√ Hz | |||||
DIGITAL INPUT | |||||||
Ci | Input capacitance | 3 | pF | ||||
Leakage input current | 0 ≤ VIN ≤ VS | 1 | 2 | μA | |||
VIL | Low-level input logic level | 0 | 0.6 | V | |||
VIH | High-level input logic level | 2 | VS | V | |||
POWER SUPPLY | |||||||
VS | Operating voltage range | TA = –40 °C to +125 °C | +2.7 | +36 | V | ||
IQ | Quiescent current | VSENSE = 0 mV | 300 | 350 | μA | ||
IQ over temperature | TA = –40 °C to +125 °C | 375 | μA | ||||
TEMPERATURE RANGE | |||||||
Specified range | –40 | +125 | °C | ||||
Operating range | –55 | +150 | °C |