ZHCSL82A May   2020  – June 2021 INA239-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements (SPI)
    7. 6.7 Timing Diagram
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Versatile High Voltage Measurement Capability
      2. 7.3.2 Power Calculation
      3. 7.3.3 Low Bias Current
      4. 7.3.4 High-Precision Delta-Sigma ADC
        1. 7.3.4.1 Low Latency Digital Filter
        2. 7.3.4.2 Flexible Conversion Times and Averaging
      5. 7.3.5 Integrated Precision Oscillator
      6. 7.3.6 Multi-Alert Monitoring and Fault Detection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown Mode
      2. 7.4.2 Power-On Reset
    5. 7.5 Programming
      1. 7.5.1 Serial Interface
        1. 7.5.1.1 SPI Frame
    6. 7.6 Register Maps
      1. 7.6.1 INA239-Q1 Registers
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Device Measurement Range and Resolution
      2. 8.1.2 Current and Power Calculations
      3. 8.1.3 ADC Output Data Rate and Noise Performance
      4. 8.1.4 Input Filtering Considerations
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Select the Shunt Resistor
        2. 8.2.2.2 Configure the Device
        3. 8.2.2.3 Program the Shunt Calibration Register
        4. 8.2.2.4 Set Desired Fault Thresholds
        5. 8.2.2.5 Calculate Returned Values
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 接收文档更新通知
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics

at TA = 25 °C, VS = 3.3 V, VSENSE = VIN+ – VIN– = 0 V, VCM = VIN– = 48 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
VCM Common-mode input range TA = –40 °C to +125 °C –0.3 85 V
VVBUS Bus voltage input range 0 85 V
CMRR Common-mode rejection –0.3 V < VCM < 85 V, TA = –40 °C to +125 °C 140 160 dB
VDIFF Shunt voltage input range TA = –40 °C to +125 °C, ADCRANGE = 0 –163.84 163.84 mV
TA = –40 °C to +125 °C, ADCRANGE = 1 –40.96 40.96 mV
Vos Shunt offset voltage VCM = 48 V ±1.5 ±5 µV
VCM = 0 V ±1.5 ±5 µV
dVos/dT Shunt offset voltage drift TA = –40 °C to +125 °C ±2 ±20 nV/°C
PSRR Shunt offset voltage vs. power supply VS = 2.7 V to 5.5 V, TA = –40 °C to +125 °C ±0.1 ±1 µV/V
Vos_bus VBUS offset voltage VBUS = 20 mV ±1 ±5 mV
dVos/dT VBUS offset voltage drift TA = –40 °C to +125 °C ±4 ±40 µV/°C
PSRR VBUS offset voltage vs. power supply VS = 2.7 V to 5.5 V ±1.1 mV/V
IB Input bias current Either input, IN+ or IN–, VCM = 85 V 0.1 2.5 nA
ZVBUS VBUS pin input impedance Active mode 0.8 1 1.2 MΩ
IVBUS VBUS pin leakage current Shutdown mode, VBUS = 85 V 10 nA
RDIFF Input differential impedance Active mode, VIN+ – VIN– < 164 mV 92 kΩ
DC ACCURACY
GSERR Shunt voltage gain error ±0.01 ±0.1 %
GS_DRFT Shunt voltage gain error drift ±25 ppm/°C
GBERR VBUS voltage gain error ±0.01 ±0.1 %
GB_DRFT VBUS voltage gain error drift ±25 ppm/°C
PTME Power total measurment error (TME) TA = –40 °C to +125 °C, at full scale ±0.7 %
ADC resolution 16 Bits
1 LSB step size Shunt voltage, ADCRANGE = 0 5 µV
Shunt voltage, ADCRANGE = 1 1.25 µV
Bus voltage 3.125 mV
Temperature 125 m°C
TCT ADC conversion-time(1) Conversion time field = 0h  50 µs
Conversion time field = 1h  84
Conversion time field = 2h  150
Conversion time field = 3h  280
Conversion time field = 4h  540
Conversion time field = 5h 1052
Conversion time field = 6h 2074
Conversion time field = 7h  4120
INL Integral Non-Linearity ±2 m%
DNL Differential Non-Linearity 0.2 LSB
CLOCK SOURCE
FOSC Internal oscillator frequency 1 MHz
FOSC_TOL Internal oscillator frequency tolerance TA = 25 °C ±0.5 %
TA = –40 °C to +125 °C ±1 %
TEMPERATURE SENSOR
Measurement range –40 +125 °C
Temperature accuracy TA = 25 °C ±0.15 ±1 °C
TA = –40 °C to +125 °C ±0.2 ±2 °C
POWER SUPPLY
VS Supply voltage 2.7 5.5 V
IQ Quiescent current VSENSE = 0 V 640 750 µA
VSENSE = 0 V, TA = –40 °C to +125 °C 1.1 mA
IQSD Quiescent current, shutdown Shuntdown mode 2.8 5 µA
TPOR Device start-up time Power-up (NPOR) 300 µs
From shutdown mode 60
DIGITAL INPUT / OUTPUT
VIH Logic input level, high 1.2 VS V
VIL Logic input level, low GND 0.4 V
VOL Logic output level, low IOL = 1 mA GND 0.4 V
VOH Logic output level, high IOL = 1 mA VS – 0.4 VS V
IIO_LEAK Digital leakage input current 0 ≤ VIN ≤ VS –1 1 µA
(1) Subject to oscillator accuracy and drift
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