ZHCSDO5C April   2015  – September 2023

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Integrated Shunt Resistor
      2. 7.3.2 Short-Circuit Duration
      3. 7.3.3 Temperature Stability
    4. 7.4 Device Functional Modes
      1. 7.4.1 Amplifier Operation
      2. 7.4.2 Input Filtering
        1. 7.4.2.1 Calculating Gain Error Resulting from External Filter Resistance
      3. 7.4.3 Shutting Down the Device
      4. 7.4.4 Using the Device with Common-Mode Transients Above 36 V
  9. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Current Summing
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Parallel Multiple INA250 Devices for Higher Current
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curve
      3. 8.2.3 Current Differencing
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
        3. 8.2.3.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 接收文档更新通知
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 静电放电警告
    6. 9.6 术语表
  11. 10Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics

At TA = 25°C, VS = 5 V, VIN+ = 12 V, VREF = 2.5 V, ISENSE = IN+ = 0 A, unless otherwise noted.
PARAMETER CONDITIONS MIN TYP MAX UNIT
INPUT
VCM Common-mode input range –0.1 36 V
CMR Common-mode rejection INA250A1, VIN+ = 0 V to 36 V,
TA = –40°C to 125°C		 94 102 dB
INA250A2, VIN+ = 0 V to 36 V,
TA = –40°C to 125°C		 97 110
INA250A3, VIN+ = 0 V to 36 V,
TA = –40°C to 125°C		 106 114
INA250A4, VIN+ = 0 V to 36 V,
TA = –40°C to 125°C		 108 118
IOS Offset current, RTI(1) INA250A1, ISENSE = 0 A ±15 ±100 mA
INA250A2, ISENSE = 0 A ±12.5 ±50
INA250A3, ISENSE = 0 A ±5 ±30
INA250A4, ISENSE = 0 A ±5 ±20
dIOS/dT RTI versus temperature TA = –40°C to 125°C 25 250 μA/°C
PSR VS = 2.7 V to 36 V, TA = –40°C to 125°C ±0.03 ±1 mA/V
IB Input bias current IB+, IB-, ISENSE = 0 A ±28 ±35 μA
VREF Reference input range(3) 0 (VS) up to 18 V
SHUNT RESISTOR(5)
RSHUNT Shunt resistance
(SH+ to SH–)		 Equivalent resistance when used with onboard amplifier 1.998 2 2.002 mΩ
Used as stand-alone resistor(7) 1.8 2 2.2
Package resistance IN+ to IN– 4.5 mΩ
Resistor temperature coefficient TA = –40°C to 125°C 15 ppm/°C
TA = –40°C to 0°C 50
TA = 0°C to 125°C 10
ISENSE Maximum continuous current(4) TA = –40°C to 85°C ±15 A
Shunt short time overload ISENSE = 30 A for 5 seconds ±0.05%
Shunt thermal shock –65°C to 150°C, 500 cycles ±0.1%
Shunt resistance to solder heat 260°C solder, 10 s ±0.1%
Shunt high temperature exposure 1000 hours, TA = 150°C ±0.15%
Shunt cold temperature storage 24 hours, TA = –65°C ±0.025%
OUTPUT
G Gain INA250A1 200 mV/A
INA250A2 500
INA250A3 800
INA250A4 2 V/A
System gain error(6) ISENSE = –10 A to 10 A, TA = 25°C ±0.05% ±0.3%
ISENSE = –10 A to 10 A,
TA = –40°C to 125°C		 ±0.75%
TA = –40°C to 125°C 45 ppm/°C
Nonlinearity error ISENSE = 0.5 A to 10 A ±0.03%
RO Output impedance 1.5 Ω
Maximum capacitive load No sustained oscillation 1 nF
VOLTAGE OUTPUT(2)
Swing to VS power-supply rail RL = 10 kΩ to GND (VS) – 0.1 (VS) – 0.2 V
Swing to GND RL = 10 kΩ to GND (VGND) + 25 (VGND) + 50 mV
FREQUENCY RESPONSE
BW Bandwidth INA250A1, CL = 10 pF 50 kHz
INA250A2, CL = 10 pF 50
INA250A3, CL = 10 pF 35
INA250A4, CL = 10 pF 11
SR Slew rate CL = 10 pF 0.2 V/μs
NOISE, RTI(1)
Voltage noise density INA250A1 51 nV/√ Hz
INA250A2 35
INA250A3 37
INA250A4 27
POWER SUPPLY
VS Operating voltage range 2.7 36 V
IQ Quiescent current TA = –40°C to 125°C 200 300 μA
TEMPERATURE RANGE
Specified range –40 125 °C
(1) RTI = referred-to-input.
(2) See Typical Characteristics curve, Output Voltage Swing vs Output Current (Figure 6-19).
(3) The supply voltage range maximum is 36 V, but the reference voltage cannot be higher than 18 V.
(4) See Figure 7-1 and the Layout section for additional information on the current derating and layout recommendations to improve the current handling capability of the device at higher temperatures.
(5) See the Section 7.3.1 section for additional information regarding the integrated current-sensing resistor.
(6) System gain error includes amplifier gain error and the integrated sense resistor tolerance. System gain error does not include the stress related characteristics of the integrated sense resistor. These characteristics are described in the Shunt Resistor section of the Electrical Characteristics table.
(7) The internal shunt resistor is intended to be used with the internal amplifier and is not intended to be used as a stand-alone resistor. See the Integrated Shunt Resistor section for more information.
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |