ZHCSIA5A July   2018  – December 2018 INA253

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     典型应用
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Integrated Shunt Resistor
      2. 8.3.2 Short-Circuit Duration
      3. 8.3.3 Temperature Stability
      4. 8.3.4 Enhanced PWM Rejection Operation
      5. 8.3.5 Input Signal Bandwidth
    4. 8.4 Device Functional Modes
      1. 8.4.1 Adjusting the Output Midpoint With the Reference Pins
      2. 8.4.2 Reference Pin Connections for Unidirectional Current Measurements
      3. 8.4.3 Ground Referenced Output
      4. 8.4.4 Reference Pin Connections for Bidirectional Current Measurements
        1. 8.4.4.1 Output Set to External Reference Voltage
      5. 8.4.5 Output Set to Mid-Supply Voltage
      6. 8.4.6 Output Set to Mid-External Reference
      7. 8.4.7 Output Set Using Resistor Divide
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Input Filtering
    2. 9.2 Typical Applications
      1. 9.2.1 High-Side, High-Drive, Solenoid Current-Sense Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Speaker Enhancements and Diagnostics Using Current Sense Amplifier
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curve
      3. 9.2.3 Current Sensing for Remote I/Os in PLC
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 开发支持
    2. 12.2 相关文档
    3. 12.3 接收文档更新通知
    4. 12.4 社区资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 术语表
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.5 Electrical Characteristics

at TA = 25 °C, VS = 5 V, ISENSE = IS+ = 0 A, VCM = 12 V, and VREF1 = VREF2 = VS / 2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
VCM Common-mode input range VIN+ = –4 V to +80 V, ISENSE = 0 A,
TA = –40°C to +125°C		 –4 80 V
CMR Common-mode rejection VIN+ = –4 V to +80 V, ISENSE = 0 A,
TA = –40°C to +125°C		 ±125 ±500 µA/V
f = 50 kHz ±13 mA/V
IOS Offset current, input-referred ISENSE = 0 A ±2.5 ±15 mA
dIOS/dT Offset current drift ISENSE = 0 A, TA = –40°C to +125°C 25 125 µA/°C
PSRR Power-supply rejection ratio VS = 2.7 V to 5.5 V, ISENSE = 0 A ±0.5 ±5 mA/V
IB Input bias current IB+, IB–, ISENSE = 0 A 90 µA
Reference input range 0 VS V
SHUNT RESISTOR
RSHUNT Shunt resistance (SH+ to SH–) Equivalent resistance when used with onboard amplifier 1.998 2 2.002 mΩ
Used as stand-alone resistor(1) 1.9 2 2.1
Package resistance IS+ to IS– 4.5 mΩ
Package inductance IS+ to IS– 3 nH
Resistor temperature coefficient TA = –40°C to +125°C 15 ppm/°C
TA = –40°C to 0°C 50
TA = 0°C to 125°C 10 ppm/°C
ISENSE Maximum continuous current(2) TA = –40°C to +85°C ±15 A
Shunt short time overload ISENSE = 30 A for 5 seconds ±0.05%
Shunt thermal shock –65°C to +150°C, 500 cycles ±0.1%
Shunt resistance to solder heat 260°C solder, 10 seconds ±0.1%
Shunt high temperature exposure 1000 hours, TA = 150°C ±0.15%
Shunt cold temperature storage 24 hours, TA = –65°C ±0.025%
OUTPUT
G Gain INA253A1 100 mV/A
INA253A2 200
INA253A3 400 mV/A
System gain error(3) GND + 50 mV ≤ VOUT ≤ VS – 200 mV, 
TA = 25°C		 ±0.05% ±0.4%
TA = –40°C to +125°C ±45 ppm/°C
Nonlinearity error GND + 10 mV ≤ VOUT ≤ VS – 200 mV ±0.01%
Reference divider accuracy VOUT = |(VREF1 – VREF2)| / 2 at ISENSE = 0 A, 
TA = –40°C to +125°C		 0.02% 0.1%
RVRR Reference voltage rejection ratio (input-referred) INA253A2 2.5 mA/V
INA253A1, INA253A3 1
Maximum capacitive load No sustained oscillation 1 nF
VOLTAGE OUTPUT
Swing to VS power-supply rail RL = 10 kΩ to GND, TA = –40°C to +125°C VS – 0.05 VS – 0.2 V
Swing to GND RL = 10 kΩ to GND, ISENSE = 0 A,
VREF1 = VREF2 = 0 V, TA = –40°C to +125°C		 VGND + 1 VGND + 10 mV
FREQUENCY RESPONSE
BW Bandwidth(4) All gains, –3-dB bandwidth 350 kHz
All gains, 2% THD+N(4) 100 kHz
Output settling time Settles to 0.5% of final value 10 µs
SR Slew rate 2.4 V/µs
NOISE (Input Referred)
Voltage noise density 40 nV/√Hz
POWER SUPPLY
VS Operating voltage range TA = –40°C to +125°C 2.7 5.5 V
IQ Quiescent current ISENSE = 0 A 1.8 2.4 mA
IQ vs temperature, TA = –40°C to +125°C   2.6
(1) The internal shunt resistor is intended to be used with the internal amplifier and is not intended to be used as a stand-alone resistor. See the Integrated Shunt Resistorsection for more information.
(2) See Maximum Continuous Currentfor additional information on the current derating and review layout recommendations to improve the current handling capability of the device at higher temperatures.
(3) System gain error includes amplifier gain error and the integrated sense resistor tolerance. System gain error does not include the stress related characteristics of the integrated sense resistor. These characteristics are described in the Shunt Resistor section of the Electrical Characteristicstable.
(4) See Bandwidthsection for more details.
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |