SBOS401C July   2007  – April 2016 INA270A-Q1 , INA271A-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Output Voltage Range
    4. 8.4 Device Functional Modes
      1. 8.4.1 First- or Second-Order Filtering
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Basic Connection
      2. 9.1.2 Selecting RS
      3. 9.1.3 Accuracy Variations as a Result of VSENSE and Common-Mode Voltage
        1. 9.1.3.1 Normal Case 1: VSENSE ≥ 20 mV, VCM ≥ VS
        2. 9.1.3.2 Low VSENSE Case 1: VSENSE < 20 mV, -16 V ≤ VCM < 0; and Low VSENSE Case 3: VSENSE < 20 mV, VS < VCM ≤ 80 V
        3. 9.1.3.3 Low VSENSE Case 2: VSENSE < 20 mV, 0 V ≤ VCM ≤ VS
      4. 9.1.4 Transient Protection
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Shutdown
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 RFI and EMI
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Related Links
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VS Supply voltage 18 V
VSENSE Differential analog input voltage range (VIN+ – VIN–) –18 18 V
VCM Common-mode analog input voltage range (VIN+ + VIN–)/2 –16 80 V
VO Analog output voltage range (OUT and PRE OUT) (GND – 0.3) (VS) + 0.3 V
II Input current (any pin) 5 mA
TJ Maximum junction temperature 150 °C
TA Operating free-air temperature –40 125 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) 2000 V
Machine Model (MM) 100
Charged-device model (CDM), per AEC Q100-011 1000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

MIN NOM MAX UNIT
VS Supply voltage 2.7 5 18 V
VCM Common mode input –16 12 80 V
TA Operating free-air temperature –40 25 125 °C

7.4 Thermal Information

THERMAL METRIC(1) INA27xA-Q1 UNIT
D (SOIC)
8 PINS
RθJA Junction-to-ambient thermal resistance 78.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 71.6 °C/W
RθJB Junction-to-board thermal resistance 68.2 °C/W
ψJT Junction-to-top characterization parameter 22 °C/W
ψJB Junction-to-board characterization parameter 67.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

TA = 25°C, VS = 5 V, VCM = 12 V, VSENSE = 100 mV, PRE OUT connected to BUF IN (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input
VSENSE Full-scale input voltage VSENSE = VIN+ - VIN– 0.15 (VS – 0.2)/ Gain V
VCM Common-mode input voltage TA = –40°C to +125°C –16 80 V
CMRR Common-mode rejection VIN+ = –16 V to +80 V 80 120 dB
VIN+ = 12 V to 80 V,
TA = –40°C to +125°C		 100 120
VOS Offset voltage, RTI(1) ±0.5 2.5 mV
TA = –40°C to +125°C ±3
dVOS/dT Input offset voltage temperature coefficient TA = –40°C to +125°C 2.5 20 μV/°C
PSR Offset voltage power-supply rejection VS = 2.7 V to 18 V, VCM = 18 V, TA = –40°C to +125°C 5 100 μV/V
IIB Input bias current IN– pin, TA = –40°C to +125°C full range ±8 ±16 μA
ZO Output impedance(2) PRE OUT pin 96 kΩ
Buffer input bias current –50 nA
Buffer input bias current temperature coefficient ±0.3 nA/°C
Output (VSENSE ≥ 20 mV)(3)
G Gain INA270A-Q1 14 V/V
INA271A-Q1 20
GBUF Output buffer gain 2 V/V
Total gain error VSENSE = 20 mV to 100 mV ±0.2% ±1%
TA = –40°C to +125°C ±2%
Total gain error temperature coefficient TA = –40°C to +125°C 50 ppm/°C
Total output error(4) ±0.75% ±2.2%
TA = –40°C to +125°C ±1% ±3%
Nonlinearity error VSENSE = 20 mV to 100 mV ±0.002%
ZO Output impedance OUT pin 1.5 Ω
Maximum capacitive load No sustained oscillation 10 nF
Voltage Output(5)
Swing to VS power-supply rail RL = 10 kΩ to GND, TA = –40°C to +125°C VS – 0.05 VS – 0.2 V
Swing to GND RL = 10 kΩ to GND, TA = –40°C to +125°C VGND + 0.003 VGND + 0.05 V
Frequency Response
BW Bandwidth CL = 5 pF 130 kHz
φm Phase margin CL < 10 nF 40 degrees
SR Slew rate 1 V/μs
ts Settling time (1%) VSENSE = 10 mV to 100 mV, CL = 5 pF 2 μs
Noise, RTI(1)
Vn Voltage noise density 40 nV/√Hz
Power Supply
IQ Quiescent current VOUT = 2 V 700 900 μA
VSENSE = 0 V, TA = –40°C to +125°C 350 950
(1) RTI = referred to input
(2) Initial resistor variation is ±30% with an additional –2200-ppm/°C temperature coefficient.
(3) For output behavior when VSENSE < 20 mV, see Application Information
(4) Total output error includes effects of gain error and VOS.

7.6 Typical Characteristics

TA = 25°C, VS = 12 V, VCM = 12 V, VSENSE = 100 mV (unless otherwise noted)
INA270A-Q1 INA271A-Q1 g_gain_freq_cl1k.gif
CLOAD = 1000 pF
Figure 1. Gain vs Frequency
INA270A-Q1 INA271A-Q1 g_gain_plot.gif
VS = 18 V
Figure 3. Gain Plot
INA270A-Q1 INA271A-Q1 g_tot_out_err_vsens.gif
Figure 5. Total Output Error vs VSENSE
INA270A-Q1 INA271A-Q1 g_pos_vos_io.gif
Output stage is designed to source current.
Current sinking capability is approximately 400 μA.
Figure 7. Positive Output Voltage Swing vs Output Current
INA270A-Q1 INA271A-Q1 g_iq_vcm.gif
Figure 9. Quiescent Current vs Common-Mode Voltage
INA270A-Q1 INA271A-Q1 g_preout_population.gif
Figure 11. Preout Output Resistance Production Distribution
INA270A-Q1 INA271A-Q1 g_small_sig_resp.gif
Figure 13. Small-Signal Step Response 10-mV to 20-mV Input
INA270A-Q1 INA271A-Q1 g_gain_freq_cl0.gif
CLOAD = 0 pF
Figure 2. Gain vs Frequency
INA270A-Q1 INA271A-Q1 g_cmrr_psr_freq.gif
Figure 4. Common-Mode and Power-Supply Rejection vs Frequency
INA270A-Q1 INA271A-Q1 g_out_err_cmv.gif
Figure 6. Output Error vs Common-Mode Voltage
INA270A-Q1 INA271A-Q1 g_iq_vo.gif
Figure 8. Quiescent Current vs Output Voltage
INA270A-Q1 INA271A-Q1 g_ioss_vcc.gif
Figure 10. Output Short-Circuit Current vs Supply Voltage
INA270A-Q1 INA271A-Q1 g_buf_gain_freq.gif
Figure 12. Buffer Gain vs Frequency
INA270A-Q1 INA271A-Q1 g_lrg_sig_resp.gif
Figure 14. Large-Signal Step Response 10-mV to 100-mV Input
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