SBOS485C November 2009 – May 2015 INA282 , INA283 , INA284 , INA285 , INA286
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage, V+ | 18 | V | ||
Analog inputs, V+IN, V–IN(2) | Differential (V+IN) – (V–IN)(3) | –5 | +5 | V |
Common-mode | –14 | +80 | V | |
REF1, REF2, OUT | GND – 0.3 | (V+) + 0.3 | V | |
Input current into any pin | 5 | mA | ||
Junction temperature | 150 | °C | ||
Storage temperature range, Tstg | –65 | +150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VCM | Common-mode input voltage | 12 | V | ||
V+ | Operating supply voltage | 5 | V | ||
TA | Operating free-air temperature | –40 | +125 | °C |
THERMAL METRIC(1) | INA28x | UNIT | ||
---|---|---|---|---|
D (SOIC) | DGK (VSSOP) | |||
8 PINS | 8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 134.9 | 164.1 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 72.9 | 56.4 | °C/W |
RθJB | Junction-to-board thermal resistance | 61.3 | 85.0 | °C/W |
ψJT | Junction-to-top characterization parameter | 18.9 | 6.5 | °C/W |
ψJB | Junction-to-board characterization parameter | 54.3 | 83.3 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | n/a | n/a | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
INPUT | |||||||
VOS | Offset voltage, RTI(1) | VSENSE = 0 mV | ±20 | ±70 | µV | ||
dVOS/dT | vs temperature | VSENSE = 0 mV, TA = –40°C to +125°C |
±0.3 | ±1.5 | µV/°C | ||
PSRR | vs power supply | V+ = +2.7 V to +18 V, VSENSE = 0 mV |
3 | μV/V | |||
VCM | Common-mode input range | TA = –40°C to +125°C | –14 | +80 | V | ||
CMRR | Common-mode rejection ratio | V+IN = –14 V to +80 V, VSENSE = 0 mV, TA = –40°C to +125°C |
120 | 140 | dB | ||
IB | Input bias current per pin(2) | VSENSE = 0 mV | 25 | µA | |||
IOS | Input offset current | VSENSE = 0 mV | 1 | µA | |||
Differential input impedance | 6 | kΩ | |||||
REFERENCE INPUTS | |||||||
Reference input gain | 1 | V/V | |||||
Reference input voltage range(3) | 0 | VGND + 9 | V | ||||
Divider accuracy(4) | ±0.2% | ±0.5% | |||||
RVRR | Reference voltage rejection ratio (VREF1 = VREF2 = 40 mV to 9 V, V+ = 18 V) |
INA282 | ±25 | ±75 | µV/V | ||
TA = –40°C to +125°C | 0.055 | µV/V/°C | |||||
INA283 | ±13 | ±30 | µV/V | ||||
TA = –40°C to +125°C | 0.040 | µV/V/°C | |||||
INA284 | ±6 | ±25 | µV/V | ||||
TA = –40°C to +125°C | 0.015 | µV/V/°C | |||||
INA285 | ±4 | ±10 | µV/V | ||||
TA = –40°C to +125°C | 0.010 | µV/V/°C | |||||
INA286 | ±17 | ±45 | µV/V | ||||
TA = –40°C to +125°C | 0.040 | µV/V/°C | |||||
GAIN(5) (GND + 0.5 V ≤ VOUT ≤ (V+) – 0.5 V; VREF1 = VREF2 = (V+) / 2 for all devices) | |||||||
G | Gain | INA282, V+ = 5 V | 50 | V/V | |||
INA283, V+ = 5 V | 200 | V/V | |||||
INA284, V+ = 12 V | 500 | V/V | |||||
INA285, V+ = 12 V | 1000 | V/V | |||||
INA286, V+ = 5 V | 100 | V/V | |||||
Gain error | INA282, INA283, INA286 | ±0.4% | ±1.4% | ||||
INA284, INA285 | ±0.4% | ±1.6% | |||||
TA = –40°C to +125°C | 0.0008 | 0.005 | %/°C | ||||
OUTPUT | |||||||
Nonlinearity error | ±0.01% | ||||||
Output impedance | 1.5 | Ω | |||||
Maximum capacitive load | No sustained oscillation | 1 | nF | ||||
VOLTAGE OUTPUT(6) | |||||||
Swing to V+ power-supply rail | V+ = 5 V, RLOAD = 10 kΩ to GND, TA = –40°C to +125°C |
(V+) – 0.17 | (V+) – 0.4 | V | |||
Swing to GND | RLOAD = 10 kΩ to GND, TA = –40°C to +125°C |
GND + 0.015 | GND + 0.04 | V | |||
FREQUENCY RESPONSE | |||||||
BW | Effective bandwidth(7) | INA282 | 10 | kHz | |||
INA283 | 10 | kHz | |||||
INA284 | 4 | kHz | |||||
INA285 | 2 | kHz | |||||
INA286 | 10 | kHz | |||||
NOISE, RTI(1) | |||||||
Voltage noise density | 1 kHz | 110 | nV/√Hz | ||||
POWER SUPPLY | |||||||
VS | Specified voltage range | TA = –40°C to +125°C | 2.7 | 18 | V | ||
IQ | Quiescent current | 600 | 900 | µA |