ZHCSJS4C May   2019  – August 2022 INA293-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Amplifier Input Common-Mode Signal
        1. 7.3.1.1 Input-Signal Bandwidth
        2. 7.3.1.2 Low Input Bias Current
        3. 7.3.1.3 Low VSENSE Operation
        4. 7.3.1.4 Wide Fixed Gain Output
        5. 7.3.1.5 Wide Supply Range
    4. 7.4 Device Functional Modes
      1. 7.4.1 Unidirectional Operation
      2. 7.4.2 High Signal Throughput
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 RSENSE and Device Gain Selection
      2. 8.1.2 Input Filtering
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Overload Recovery With Negative VSENSE
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  9. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 接收文档更新通知
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 术语表
  10. 10Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.4 Thermal Information

THERMAL METRIC(1) INA293-Q1 UNIT
DBV (SOT-23)
5 PINS
RθJA Junction-to-ambient thermal resistance 184.7 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 105.6 °C/W
RθJB Junction-to-board thermal resistance 47.2 °C/W
ΨJT Junction-to-top characterization parameter 21.5 °C/W
ΨJB Junction-to-board characterization parameter 46.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
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