ZHCS890B May   2012  – March 2016 INA3221

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Basic ADC Functions
      2. 8.3.2 Alert Monitoring
        1. 8.3.2.1 Critical Alert
          1. 8.3.2.1.1 Summation Control Function
        2. 8.3.2.2 Warning Alert
        3. 8.3.2.3 Power-Valid Alert
        4. 8.3.2.4 Timing-Control Alert
        5. 8.3.2.5 Default Settings
      3. 8.3.3 Software Reset
    4. 8.4 Device Functional Modes
      1. 8.4.1 Averaging Function
      2. 8.4.2 Multiple Channel Monitoring
        1. 8.4.2.1 Channel Configuration
        2. 8.4.2.2 Averaging and Conversion-Time Considerations
      3. 8.4.3 Filtering and Input Considerations
    5. 8.5 Programming
      1. 8.5.1 Bus Overview
        1. 8.5.1.1 Serial Bus Address
        2. 8.5.1.2 Serial Interface
      2. 8.5.2 Writing To and Reading From the INA3221
        1. 8.5.2.1 High-Speed I2C Mode
      3. 8.5.3 SMBus Alert Response
    6. 8.6 Register Maps
      1. 8.6.1 Summary of Register Set
      2. 8.6.2 Register Descriptions
        1. 8.6.2.1  Configuration Register (address = 00h) [reset = 7127h]
        2. 8.6.2.2  Channel-1 Shunt-Voltage Register (address = 01h), [reset = 00h]
        3. 8.6.2.3  Channel-1 Bus-Voltage Register (address = 02h) [reset = 00h]
        4. 8.6.2.4  Channel-2 Shunt-Voltage Register (address = 03h) [reset = 00h]
        5. 8.6.2.5  Channel-2 Bus-Voltage Register (address = 04h) [reset = 00h]
        6. 8.6.2.6  Channel-3 Shunt-Voltage Register (address = 05h) [reset = 00h]
        7. 8.6.2.7  Channel-3 Bus-Voltage Register (address = 06h) [reset = 00h]
        8. 8.6.2.8  Channel-1 Critical-Alert Limit Register (address = 07h) [reset = 7FF8h]
        9. 8.6.2.9  Warning-Alert Channel-1 Limit Register (address = 08h) [reset = 7FF8h]
        10. 8.6.2.10 Channel-2 Critical-Alert Limit Register (address = 09h) [reset = 7FF8h]
        11. 8.6.2.11 Channel-2 Warning-Alert Limit Register (address = 0Ah) [reset = 7FF8h]
        12. 8.6.2.12 Channel-3 Critical-Alert Limit Register (address = 0Bh) [reset = 7FF8h]
        13. 8.6.2.13 Channel-3 Warning-Alert Limit Register (address = 0Ch) [reset = 7FF8h]
        14. 8.6.2.14 Shunt-Voltage Sum Register (address = 0Dh) [reset = 00h]
        15. 8.6.2.15 Shunt-Voltage Sum-Limit Register (address = 0Eh) [reset = 7FFEh]
        16. 8.6.2.16 Mask/Enable Register (address = 0Fh) [reset = 0002h]
        17. 8.6.2.17 Power-Valid Upper-Limit Register (address = 10h) [reset = 2710h]
        18. 8.6.2.18 Power-Valid Lower-Limit Register (address = 11h) [reset = 2328h]
        19. 8.6.2.19 Manufacturer ID Register (address = FEh) [reset = 5449h]
        20. 8.6.2.20 Die ID Register (address = FFh) [reset = 3220]
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 开发支持
    2. 12.2 文档支持
      1. 12.2.1 相关文档
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage Supply, VS 6 V
Analog inputs IN+, IN– Differential (VIN+) – (VIN–)(2) –26 26 V
Common-mode (VIN+) + (VIN–) / 2 –0.3 26
VPU 26
Digital outputs Critical, warning, power valid 6 V
Timing control 26
Serial bus Data line, SDA (GND – 0.3) 6 V
Clock line, SCL (GND – 0.3) (VS + 0.3)
Current Input, into any pin 5 mA
Open-drain, digital output 10
Temperature Operating, TA –40 125 °C
Junction, TJ 150
Storage, Tstg –65 150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) VIN+ and VIN– can have a differential voltage of –26 V to +26 V; however, the voltage at these pins must not exceed the range of
–0.3 V to +26 V.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
Machine model ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Operating supply voltage 2.7 5.5 V
Operating temperature, TA –40 125 °C

7.4 Thermal Information

THERMAL METRIC(1) INA3221 UNIT
RGV (VQFN)
16 PINS
RθJA Junction-to-ambient thermal resistance 36.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 42.7 °C/W
RθJB Junction-to-board thermal resistance 14.7 °C/W
ψJT Junction-to-top characterization parameter 0.5 °C/W
ψJB Junction-to-board characterization parameter 14.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report (SPRA953).

7.5 Electrical Characteristics

at TA = 25°C, VS = 3.3 V, VIN+ = 12 V, VSHUNT = (VIN+) – (VIN–) = 0 mV, and VBUS = VIN– = 12 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
VSHUNT Shunt voltage input –163.84 163.8 mV
VBUS Bus voltage input 0 26 V
CMR Common-mode rejection VIN+ = 0 V to +26 V 110 120 dB
VOS Shunt offset voltage, RTI(1) ±40 ±80 μV
TA = –40°C to +125°C 0.1 0.5 μV/°C
PSRR vs power supply, VS = 2.7 V to 5.5 V 15 μV/V
VOS Bus offset voltage, RTI(1) ±8 ±16 mV
TA = –40°C to +125°C 80 μV/°C
PSRR vs power supply 0.5 mV/V
IIN+ Input bias current at IN+ 10 μA
IIN– Input bias current at IN– 10 || 670 μA || kΩ
Input leakage(2) (IN+ pin) + (IN– pin), power-down mode 0.1 0.5 μA
DC ACCURACY
ADC native resolution 13 Bits
1-LSB step size Shunt voltage 40 μV
Bus voltage 8 mV
Shunt voltage gain error 0.1% 0.25%
TA = –40°C to +125°C 10 50 ppm/°C
Bus voltage gain error 0.1% 0.25%
TA = –40°C to +125°C 10 50 ppm/°C
DNL Differential nonlinearity ±0.1 LSB
tCONVERT ADC conversion time CT bit = 000 140 154 µs
CT bit = 001 204 224
CT bit = 010 332 365
CT bit = 011 588 646
CT bit = 100 1.1 1.21 ms
CT bit = 101 2.116 2.328
CT bit = 110 4.156 4.572
CT bit = 111 8.244 9.068
SMBus
SMBus timeout(3) 28 35 ms
DIGITAL INPUT/OUTPUT
CI Input capacitance 3 pF
Leakage input current 0 V ≤ VIN ≤ VS 0.1 1 μA
VIH High-level input voltage 0.7 (VS) 6 V
VIL Low-level input voltage –0.5 0.3 (VS) V
VOL Low-level output voltage SDA, critical, warning, PV VS > +2.7 V, IOL = 3 mA 0 0.4 V
TC VS > +2.7 V, IOL = 1.2 mA 0 0.4
Vhys Hysteresis voltage 500 mV
POWER SUPPLY
Quiescent current 350 450 μA
Power-down mode 0.5 2
Power-on reset threshold 2 V
(1) RTI = Referred-to-input.
(2) Input leakage is positive (current flows into the pin) for the conditions shown at the top of this table. Negative leakage currents can occur under different input conditions.
(3) SMBus timeouts in the INA3221 reset the interface whenever SCL is low for more than 28 ms.

7.6 Typical Characteristics

at TA = 25°C, VS = 3.3 V, VIN+ = 12 V, VSHUNT = (VIN+) – (VIN–) = 0 mV, and VBUS = VIN– = 12 V (unless otherwise noted)
INA3221 g001_bos547.png
Figure 1. Frequency Response
INA3221 g004_bos576.png
Figure 3. Shunt Input Offset Voltage vs Temperature
INA3221 G006_BOS576.gif
Figure 5. Shunt Input Gain Error Production Distribution
INA3221 g008_bos576.png
Figure 7. Shunt Input Gain Error vs Common-Mode Voltage
INA3221 g010_bos576.png
Figure 9. Bus Input Offset Voltage vs Temperature
INA3221 g012_bos576.png
Figure 11. Bus Input Gain Error vs Temperature
INA3221 g014_bos576.png
Figure 13. Input Bias Current vs Temperature
INA3221 g016_bos576.png
Figure 15. Active IQ vs Temperature
INA3221 g018_bos576.png
Figure 17. Active IQ vs I2C Clock Frequency
INA3221 G003_BOS576.gif
Figure 2. Shunt Input Offset Voltage Production Distribution
INA3221 g005_bos576.png
Figure 4. Shunt Input Common-Mode Rejection Ratio vs Temperature
INA3221 g007_bos576.png
Figure 6. Shunt Input Gain Error vs Temperature
INA3221 G009_BOS576.gif
Figure 8. Bus Input Offset Voltage Production Distribution
INA3221 G011_BOS576.gif
Figure 10. Bus Input Gain Error Production Distribution
INA3221 g013_bos576.png
Figure 12. Input Bias Current vs Common-Mode Voltage
INA3221 g015_bos576.png
Figure 14. Input Bias Current vs Temperature (Shutdown)
INA3221 g017_bos576.png
Figure 16. Shutdown IQ vs Temperature
INA3221 g019_bos576.png
Figure 18. Shutdown IQ vs I2C Clock Frequency
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