SBOS562G August   2011  – June 2020 INA826

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      General-Purpose Instrumentation Amplifier
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Inside the INA826
      2. 8.3.2  Setting the Gain
        1. 8.3.2.1 Gain Drift
      3. 8.3.3  Offset Trimming
      4. 8.3.4  Input Common-Mode Range
      5. 8.3.5  Input Protection
      6. 8.3.6  Input Bias Current Return Path
      7. 8.3.7  Reference Terminal
      8. 8.3.8  Dynamic Performance
      9. 8.3.9  Operating Voltage
        1. 8.3.9.1 Low-Voltage Operation
      10. 8.3.10 Error Sources
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 System Examples
      1. 9.3.1 Circuit Breaker
      2. 9.3.2 Programmable Logic Controller (PLC) Input
      3. 9.3.3 Using TINA-TI SPICE-Based Analog Simulation Program With the INA826
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 CMRR vs Frequency
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.5 Electrical Characteristics

at TA = 25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, and G = 1 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
VOSI Input stage offset voltage(1) RTI 40 150 µV
vs temperature, TA = –40°C to +125°C 0.4 2 µV/°C
VOSO Output stage offset voltage(1) RTI 200 700 µV
vs temperature, TA = –40°C to +125°C 2 10 µV/°C
PSRR Powersupply rejection ratio G = 1, RTI 100 124 dB
G = 10, RTI 115 130
G = 100, RTI 120 140
G = 1000, RTI 120 140
zid Differential impedance 20 || 1 GΩ || pF
zic Common-mode impedance 10 || 5 GΩ || pF
RFI filter, –3-dB frequency 20 MHz
VCM Operating input range(2) V– (V+) – 1 V
VS = ±1.5 V to ±18 V
TA = –40°C to +125°C 		See Figure 41 to Figure 44
Input overvoltage range TA = –40°C to +125°C ±40 V
CMRR Common-mode rejection ratio At dc to 60 Hz, RTI G = 1, VCM = (V–) to (V+) – 1 V 84 95 dB
G = 10, VCM = (V–) to (V+) – 1 V 104 115
G = 100, VCM = (V–) to (V+) – 1 V 120 130
G = 1000, VCM = (V–) to (V+) – 1 V 120 130
G = 1, VCM = (V–) to (V+) – 1 V,
TA = –40°C to +125°C		 80
At 5 kHz, RTI G = 1, VCM = (V–) to (V+) – 1 V 84
G = 10, VCM = (V–) to (V+) – 1 V 100
G = 100, VCM = (V–) to (V+) – 1 V 105
G = 1000, VCM = (V–) to (V+) – 1 V 105
BIAS CURRENT
IB Input bias current VCM = VS / 2 35 65 nA
TA = –40°C to +125°C 95
IOS Input offset current VCM = VS / 2 0.7 5 nA
TA = –40°C to +125°C 10
NOISE VOLTAGE
eNI Input stage voltage noise(4) f = 1 kHz, G = 100, RS = 0 Ω 18 20 nV/√Hz
fB = 0.1 Hz to 10 Hz, G = 100, RS = 0 Ω 0.52 µVPP
eNO Output stage voltage noise(4) f = 1 kHz, G = 1, RS = 0 Ω 110 115 nV/√Hz
fB = 0.1 Hz to 10 Hz, G = 1, RS = 0 Ω 3.3 µVPP
In Noise current f = 1 kHz 100 fA/√Hz
fB = 0.1 Hz to 10 Hz 5 pAPP
GAIN
G Gain equation INA826 q_ec_g_equation_bos562.gif V/V
Range of gain 1 1000 V/V
GE Gain error G = 1, VO = ±10 V ±0.003% ±0.015%
G = 10, VO = ±10 V ±0.03% ±0.15%
G = 100, VO = ±10 V ±0.04% ±0.15%
G = 1000, VO = ±10 V ±0.04% ±0.15%
Gain vs temperature(3) G = 1, TA = –40°C to +125°C ±0.1 ±1 ppm/°C
G > 1, TA = –40°C to +125°C ±10 ±35
Gain nonlinearity G = 1 to 100, VO = –10 V to +10 V 1 5 ppm
G = 1000, VO = –10 V to +10 V 5 20
OUTPUT
Voltage swing RL = 10 kΩ (V–) + 0.1 (V+) – 0.15 V
Load capacitance stability 1000 pF
ZO Open-loop output impedance See Figure 56
ISC Short-circuit current Continuous to VS / 2 ±16 mA
FREQUENCY RESPONSE
BW Bandwidth, –3 dB G = 1 1 MHz
G = 10 500 kHz
G = 100 60
G = 1000 6
SR Slew rate G = 1, VO = ±14.5 V 1 V/µs
G = 100, VO = ±14.5 V 1
tS Settling time 0.01% G = 1, VSTEP = 10 V 12 µs
G = 10, VSTEP = 10 V 12
G = 100, VSTEP = 10 V 24
G = 1000, VSTEP = 10 V 224
0.001% G = 1, VSTEP = 10 V 14
G = 10, VSTEP = 10 V 14
G = 100, VSTEP = 10 V 31
G = 1000, VSTEP = 10 V 278
REFERENCE INPUT
RIN Input impedance 100 kΩ
Voltage range (V–) (V+) V
Gain to output 1 V/V
Reference gain error 0.01%
POWER SUPPLY
IQ Quiescent current VIN = 0 V 200 250 µA
vs temperature, TA = –40°C to +125°C 250 300
(1) Total offset, referred-to-input (RTI): VOS = (VOSI) + (VOSO / G).
(2) Input voltage range of the INA826 input stage. The input range depends on the common-mode voltage, differential voltage, gain, and reference voltage. See Typical Characteristic curves Figure 9 through Figure 16 and Figure 41 through Figure 44 for more information.
(3) The values specified for G > 1 do not include the effects of the external gain-setting resistor, RG.
(4)
Total RTI voltage noise = INA826 q_total_rti_noise_bos562.gif.
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