ZHCSGR1A August 2017 – January 2018 INA828
PRODUCTION DATA.
N = 1886 | Mean = 4.73 µV |
Std. Dev. = 13.98 µV |
N = 1886 | Mean = –8.71 µV |
Std. Dev. = 48.57 µV |
G = 100 |
88 units, 3 wafer lots |
N = 1886 | Mean = 36.25 pA |
Std. Dev. = 65.31 pA |
N = 1886 | Mean = –52.64 pA |
Std. Dev. = 63.86 pA |
N = 1886 | Mean = 0.01 µV/V |
Std. Dev. = 0.1 µV/V |
VS = ±15 V |
G = 10, RL = 10 kΩ, CL = 100 pF |
G = 1000, RL = 10 kΩ, CL = 100 pF |
VS = 5 V, G = 100 |
VS = ±15 V, VREF = 0 V |
N = 19081 | Mean = 0.16 nV/°C |
Std. Dev. = 0.09 µV/°C |
N = 19081 | Mean = –0.73 µV/°C |
Std. Dev. = 0.74 µV/°C |
G = 1 |
88 units, 3 wafer lots |
N = 19081 | Mean = –5.32 pA |
Std. Dev. = 57.46 pA |
N = 1886 | Mean = 1.18 µV/V |
Std. Dev. = 10.04 µV/V |
5 Typical Units |
500-kHz Measurement bandwidth | 1-VRMS Output voltage |
100-kΩ Load |
G = 1, RL = 10 kΩ, CL = 100 pF |
G = 100, RL = 10 kΩ, CL = 100 pF |
VS = 5 V, G = 1 |
VS = ±5 V, VREF = 0 V |