4 修订历史记录
Changes from D Revision (March 2018) to E Revision
- Changed VIH and VIH to VIL and VIH in the RTHR resistor description in the Setting Current Limit and Voltage Thresholds sectionGo
Changes from C Revision (February 2018) to D Revision
- 更新了特性 和应用 部分。在说明 和相关文档 部分中添加了新的 TI 技术手册参考。Go
- Changed the unit for CPG from µm to mm in the Insulation Specifications tableGo
- Changed the Functional Block DiagramGo
- Changed VIL from min to typ in the VIL equationGo
- Added the Designing for Input Voltages Greater Than 60 V sectionGo
- Added the bidirectional implementation example to the Sourcing and Sinking Inputs sectionGo
Changes from B Revision (September 2017) to C Revision
- Added 将断线检测添加到特性 部分Go
- Added 将多路复用器输出信号使能引脚添加到了特性 部分中,更改了所有需要为 DW 和 D 封装完成的认证Go
- Changed RTHR = 5 kΩ to 4 kΩ in the High-Level Voltage Transition Threshold vs Ambient Temperature graphGo
- Changed the Type 1 RTH value from 3 kΩ to 2.5 kΩ in the Surge, IEC ESD and EFT tableGo
Changes from A Revision (September 2017) to B Revision