SBOS160A November   1993  – January 2015 ISO122

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Simplified Schematic
  5. 5 Revision History
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
      1. 8.1.1 Modulator
      2. 8.1.2 Demodulator
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Isolation Amplifier
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Carrier Frequency Considerations
      2. 9.1.2 Isolation Mode Voltage Induced Errors
      3. 9.1.3 High IMV dV/dt Errors
      4. 9.1.4 High Voltage Testing
    2. 9.2 Typical Application
      1. 9.2.1 Output Filter
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Battery Monitor
      3. 9.2.3 Programmable Gain Amplifier
      4. 9.2.4 Thermocouple Amplifier
      5. 9.2.5 Isolated 4- to 20-mA Instrument Loop
      6. 9.2.6 Single-Supply Operation of the ISO122P Isolation Amplifier
      7. 9.2.7 Input-Side Powered ISO Amp
      8. 9.2.8 Powered ISO Amp With Three-Port Isolation
  10. 10Power Supply Recommendations
    1. 10.1 Signal and Supply Connections
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Trademarks
    2. 12.2 Electrostatic Discharge Caution
    3. 12.3 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

12 Device and Documentation Support

12.1 Trademarks

All other trademarks are the property of their respective owners.

12.2 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

12.3 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.
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