SBOS160A November   1993  – January 2015 ISO122

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Simplified Schematic
  5. 5 Revision History
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
      1. 8.1.1 Modulator
      2. 8.1.2 Demodulator
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Isolation Amplifier
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Carrier Frequency Considerations
      2. 9.1.2 Isolation Mode Voltage Induced Errors
      3. 9.1.3 High IMV dV/dt Errors
      4. 9.1.4 High Voltage Testing
    2. 9.2 Typical Application
      1. 9.2.1 Output Filter
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Battery Monitor
      3. 9.2.3 Programmable Gain Amplifier
      4. 9.2.4 Thermocouple Amplifier
      5. 9.2.5 Isolated 4- to 20-mA Instrument Loop
      6. 9.2.6 Single-Supply Operation of the ISO122P Isolation Amplifier
      7. 9.2.7 Input-Side Powered ISO Amp
      8. 9.2.8 Powered ISO Amp With Three-Port Isolation
  10. 10Power Supply Recommendations
    1. 10.1 Signal and Supply Connections
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Trademarks
    2. 12.2 Electrostatic Discharge Caution
    3. 12.3 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Supply voltage ±18 V
VIN 100 V
Continuous isolation voltage 1500 Vrms
Junction temperature 150 °C
Output short to common Continuous
Storage temperature, Tstg –40 125 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
TA –25 85 °C
+VS1 15
-VS1 –15
+VS2 15
-VS2 –15
VIN ±10

7.4 Thermal Information

THERMAL METRIC(1) ISO122 UNIT
NVF (PDIP) DVA (SOIC)
16 PINS 28 PINS
RθJA Junction-to-ambient thermal resistance 51.0 79.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 32.4 32.9
RθJB Junction-to-board thermal resistance 29.5 42.2
ψJT Junction-to-top characterization parameter 10.4 6.6
ψJB Junction-to-board characterization parameter 29.0 40.9
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

At TA = +25°C , VS1 = VS2 = ±15 V, and RL = 2 kΩ, unless otherwise noted.
PARAMETER TEST CONDITIONS ISO122P/U ISO122JP/JU UNIT
MIN TYP MAX MIN TYP MAX
ISOLATION
Voltage rated continuous ac 60Hz 1500 1500 Vac
100% Test(1) 1s, 5pc PD 2400 2400 Vac
Isolation Mode Rejection 60Hz 140 140 dB
Barrier Impedance 1014 || 2 1014 || 2 Ω || pF
Leakage Current at 60Hz VISO = 240Vrms 0.18 0.5 0.18 0.5 µArms
GAIN
Nominal Gain VO = ±10V 1 1 V/V
Gain Error ±0.05 ±0.50 ±0.05 ±0.50 %FSR
Gain vs Temperature ±10 ±10 ppm/°C
Nonlinearity(2) ±0.016 ±0.020 ±0.025 ±0.050 %FSR
INPUT OFFSET VOLTAGE
Initial Offset ±20 ±50 ±20 ±50 mV
vs Temperature ±200 ±200 µV/°C
vs Supply ±2 ±2 mV/V
Noise 4 µV/√Hz
INPUT
Voltage Range ±10 ±12.5 ±10 ±12.5 V
Resistance 200 200 kΩ
OUTPUT
Voltage Range ±10 ±12.5 ±10 ±12.5 V
Current Drive ±5 ±15 ±5 ±15 mA
Capacitive Load Drive 0.1 0.1 µF
Ripple Voltage(3) 20 20 mVp-p
FREQUENCY RESPONSE
Small-Signal Bandwidth 50 50 kHz
Slew Rate 2 2 V/µs
Settling Time 0.10% VO = ±10V 50 50 µs
Settling Time 0.01% 350 350 µs
Overload Recovery Time 150 150 µs
POWER SUPPLIES
Rated Voltage ±15 ±15 V
Voltage Range ±4.5 ±18 ±4.5 ±18 V
VS1 Quiescent Current ±5 ±7 ±5 ±7 mA
VS2 ±5.5 ±7 ±5.5 ±7
TEMPERATURE RANGE
Specification –25 85 –25 85 °C
Operating –25 85 –25 85 °C
Storage –40 125 –40 125 °C
θJA Thermal Resistance 100 100 °C/W
θJC 65 65 °C/W
(1) Tested at 1.6 X rated, fail on 5pC partial discharge.
(2) Nonlinearity is the peak deviation of the output voltage from the best-fit straight line. It is expressed as the ratio of deviation to FSR.
(3) Ripple frequency is at carrier frequency (500kHz).

7.6 Typical Characteristics

At TA = +25°C, and VS = ±15 V, unless otherwise noted.
graph_1_sbos160.gif
f = 2kHz
Figure 1. Sine Response
graph_3_sbos160.gif
Figure 3. Step Response
graph_5_sbos160.gif
Figure 5. Isolation Voltage vs Frequency
graph_7_sbos160.gif
Figure 7. PSRR vs Frequency
graph_9_sbos160.gif
NOTE: Shaded area shows aliasing frequencies that cannot be removed by a low-pass filter at the output.
Figure 9. Signal Response to Inputs Greater than 250 kHz
graph_2_sbos160.gif
f = 20kHz
Figure 2. Sine Response
graph_4_sbos160.gif
Figure 4. Step Response
graph_6_sbos160.gif
Figure 6. IMR vs Frequency
graph_8_sbos160.gif
Figure 8. Isolation Leakage Current vs Frequency
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