ZHCSUB1B August   2023  – April 2024 ISO6520 , ISO6521

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Package Characteristics
    6. 5.6  Electrical Characteristics—5-V Supply
    7. 5.7  Supply Current Characteristics—5-V Supply
    8. 5.8  Electrical Characteristics—3.3-V Supply
    9. 5.9  Supply Current Characteristics—3.3-V Supply
    10. 5.10 Electrical Characteristics—2.5-V Supply 
    11. 5.11 Supply Current Characteristics—2.5-V Supply
    12. 5.12 Electrical Characteristics—1.8-V Supply
    13. 5.13 Supply Current Characteristics—1.8-V Supply
    14. 5.14 Switching Characteristics—5-V Supply
    15. 5.15 Switching Characteristics—3.3-V Supply
    16. 5.16 Switching Characteristics—2.5-V Supply
    17. 5.17 Switching Characteristics—1.8-V Supply
    18. 5.18 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Device I/O Schematics
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
  10. Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 PCB Material
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

特性

  • 双通道 CMOS 输出功能隔离器
  • 50Mbps 数据速率
  • 稳健可靠的 SiO2 隔离栅(CMTI 典型值为 ±150kV/μs)
  • 功能隔离(8-EEU):
    • 200VRMS、280VDC 工作电压
    • 570VRMS、800VDC 瞬态电压 (60s)
  • 功能隔离(8-D):
    • 450VRMS、637VDC 工作电压
    • 707VRMS、1000VDC 瞬态电压 (60s)
  • 采用爬电距离 >2.2mm 的紧凑型 8-REU 封装
  • 宽电源电压范围:1.71V 到 1.89V 和 2.25V 到 5.5V
  • 1.71V 至 5.5V 电平转换
  • 默认输出高电平 (ISO652x) 和低电平 (ISO652xF) 选项
  • 宽温度范围:-40°C 至 125°C
  • 3.3V、1Mbps 时每通道电流典型值为 1.8mA
  • 低传播延迟:3.3V 时为 11ns(典型值)
  • 优异的电磁兼容性 (EMC)
    • 系统级 ESD、EFT 和浪涌抗扰度
    • 超低辐射
  • 无引线 DFN (8-REU) 封装和窄体 SOIC (8-D) 封装选项