SLLSE39E June   2010  – May 2015 ISO7520C , ISO7521C

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics: VCC1 and VCC2 at 5 V ± 5%
    6. 6.6  Electrical Characteristics: VCC1 at 5 V ± 5%, VCC2 at 3.3 V ± 5%
    7. 6.7  Electrical Characteristics: VCC1 at 3.3 V ± 5%, VCC2 at 5 V ± 5%
    8. 6.8  Electrical Characteristics: VCC1 and VCC2 at 3.3 V ± 5%
    9. 6.9  Switching Characteristics: VCC1 and VCC2 at 5 V ± 5%
    10. 6.10 Switching Characteristics: VCC1 at 5 V ± 5%, VCC2 at 3.3 V ± 5%
    11. 6.11 Switching Characteristics: VCC1 at 3.3 V ± 5%, VCC2 at 5 V ± 5%
    12. 6.12 Switching Characteristics: VCC1 and VCC2 at 3.3 V ± 5%
    13. 6.13 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Insulation Characteristics
      2. 8.3.2 IEC 60664-1 Ratings Table
      3. 8.3.3 Package Insulation and Safety-Related Specifications
      4. 8.3.4 Safety Limiting Values
      5. 8.3.5 Regulatory Information
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 PCB Material
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Related Links
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings(1)

MIN MAX UNIT
VCC1, VCC2 Supply voltage(2) –0.5 6 V
VI Voltage at INx, OUTx –0.5 VCC + 0.5(3) V
IO Output Current –15 15 mA
TJ Maximum junction temperature 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values except differential I/O bus voltages are with respect to network ground terminal and are peak voltage values.
(3) Maximum voltage must not exceed 6 V.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
Machine model (MM) ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VCC1, VCC2 Supply voltage - 3.3-V Operation 3.15 3.3 3.45 V
Supply voltage - 5-V Operation 4.75 5 5.25
IOH High-level output current –4 mA
IOL Low-level output current 4 mA
VIH High-level output voltage 2 5.25 V
VIL Low-level output voltage 0 0.8 V
TA Ambient temperature -40 105 °C
TJ(1) Junction temperature –40 136 °C
1/tui Signaling rate 0 1 Mbps
tui Input pulse duration 1 µs
(1) To maintain the recommended operating conditions for TJ, see Thermal Information.

6.4 Thermal Information

THERMAL METRIC(1) ISO7520C, ISO7521C UNIT
DW [SOIC]
16 PINS
RθJA Junction-to-ambient thermal resistance 79.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 44.6 °C/W
RθJB Junction-to-board thermal resistance 51.2 °C/W
ψJT Junction-to-top characterization parameter 18.0 °C/W
ψJB Junction-to-board characterization parameter 42.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics: VCC1 and VCC2 at 5 V ± 5%

VCC1 and VCC2 at 5 V ±5%, TA = –40°C to 105°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOH High-level output voltage IOH = –4 mA; See Figure 4 VCCO –0.8(1) 4.6 V
IOH = –20 µA; See Figure 4 VCCO –0.1 5
VOL Low-level output voltage IOL = 4 mA; See Figure 4 0.2 0.4 V
IOL = 20 µA; See Figure 4 0 0.1
VI(HYS) Input threshold voltage hysteresis 400 mV
IIH High-level input current INx at VCCI(2) 10 µA
IIL Low-level input current INx at 0 V –10 µA
CMTI Common-mode transient immunity VI = VCCI or 0 V; See Figure 6 25 50 kV/µs
SUPPLY CURRENT (ALL INPUTS SWITCHING WITH SQUARE-WAVE CLOCK SIGNAL FOR DYNAMIC ICC MEASUREMENT)
ISO7520C
ICC1 Supply current for VCC1 DC to 1 Mbps VI = VCCI or 0 V, 15-pF load 0.4 1 mA
ICC2 Supply current for VCC2 DC to 1 Mbps VI = VCCI or 0 V, 15-pF load 3 6 mA
ISO7521C
ICC1 Supply current for VCC1 DC to 1 Mbps VI = VCCI or 0 V, 15-pF load 2 4 mA
ICC2 Supply current for VCC2 DC to 1 Mbps VI = VCCI or 0 V, 15-pF load 2 4 mA
(1) VCCO is the supply voltage, VCC1 or VCC2, for the output channel that is being measured.
(2) VCCI is the supply voltage, VCC1 or VCC2, for the input channel that is being measured.

6.6 Electrical Characteristics: VCC1 at 5 V ± 5%, VCC2 at 3.3 V ± 5%

VCC1 at 5 V ±5%, VCC2 at 3.3 V ±5%, TA = –40°C to 105°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOH High-level output voltage IOH = –4 mA; See Figure 4 ISO7521C (5-V side) VCCO –0.8 4.6 V
ISO7520C/7521C(3.3-V side) VCCO –0.4 3
IOH = –20 µA; See Figure 4 VCCO –0.1 VCCO
VOL Low-level output voltage IOL = 4 mA; See Figure 4 0.2 0.4 V
IOL = 20 µA; See Figure 4 0 0.1
VI(HYS) Input threshold voltage hysteresis 400 mV
IIH High-level input current INx at VCCI 10 µA
IIL Low-level input current INx at 0 V –10 µA
CMTI Common-mode transient immunity VI = VCCI or 0 V; See Figure 6 25 40 kV/µs
SUPPLY CURRENT (ALL INPUTS SWITCHING WITH SQUARE-WAVE CLOCK SIGNAL FOR DYNAMIC ICC MEASUREMENT)
ISO7520C
ICC1 Supply current for VCC1 DC to 1 Mbps VI = VCCI or 0 V, 15-pF load 0.4 1 mA
ICC2 Supply current for VCC2 DC to 1 Mbps VI = VCCI or 0 V, 15-pF load 2 4.5 mA
ISO7521C
ICC1 Supply current for VCC1 DC to 1 Mbps VI = VCCI or 0 V, 15-pF load 2 4 mA
ICC2 Supply current for VCC2 DC to 1 Mbps VI = VCCI or 0 V, 15-pF load 1.5 3.5 mA

6.7 Electrical Characteristics: VCC1 at 3.3 V ± 5%, VCC2 at 5 V ± 5%

VCC1 at 3.3 V ±5%, VCC2 at 5 V ±5%, TA = –40°C to 105°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOH High-level output voltage IOH = –4 mA; See Figure 4 ISO7520C/7521C (5-V side) VCCO –0.8 4.6 V
ISO7521C (3.3-V side) VCCO –0.4 3
IOH = –20 µA; See Figure 4 VCCO –0.1 VCCO
VOL Low-level output voltage IOL = 4 mA; See Figure 4 0.2 0.4 V
IOL = 20 µA; See Figure 4 0 0.1
VI(HYS) Input threshold voltage hysteresis 400 mV
IIH High-level input current INx at VCCI 10 µA
IIL Low-level input current INx at 0 V –10 µA
CMTI Common-mode transient immunity VI = VCCI or 0 V; See Figure 6 25 40 kV/µs
SUPPLY CURRENT (ALL INPUTS SWITCHING WITH SQUARE-WAVE CLOCK SIGNAL FOR DYNAMIC ICC MEASUREMENT)
ISO7520C
ICC1 Supply current for VCC1 DC to 1 Mbps VI = VCCI or 0 V, 15-pF load 0.2 0.7 mA
ICC2 Supply current for VCC2 DC to 1 Mbps VI = VCCI or 0 V, 15-pF load 3 6 mA
ISO7521C
ICC1 Supply current for VCC1 DC to 1 Mbps VI = VCCI or 0 V, 15-pF load 1.5 3.5 mA
ICC2 Supply current for VCC2 DC to 1 Mbps VI = VCCI or 0 V, 15-pF load 2 4 mA

6.8 Electrical Characteristics: VCC1 and VCC2 at 3.3 V ± 5%

VCC1 and VCC2 at 3.3 V ±5%, TA = –40°C to 105°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOH High-level output voltage IOH = –4 mA; See Figure 4 VCCO –0.4 3 V
IOH = –20 µA; See Figure 4 VCCO –0.1 3.3
VOL Low-level output voltage IOL = 4 mA; See Figure 4 0.2 0.4 V
IOL = 20 µA; See Figure 4 0 0.1
VI(HYS) Input threshold voltage hysteresis 400 mV
IIH High-level input current INx at VCCI µA
IIL Low-level input current INx at 0 V –10 µA
CMTI Common-mode transient immunity VI = VCCI or 0 V; See Figure 6 25 40 kV/µs
SUPPLY CURRENT (ALL INPUTS SWITCHING WITH SQUARE-WAVE CLOCK SIGNAL FOR DYNAMIC ICC MEASUREMENT)
ISO7520C
ICC1 Supply current for VCC1 DC to 1 Mbps VI = VCCI or 0 V, 15-pF load 0.2 0.7 mA
ICC2 Supply current for VCC2 DC to 1 Mbps VI = VCCI or 0 V, 15-pF load 2 4.5 mA
ISO7521C
ICC1 Supply current for VCC1 DC to 1 Mbps VI = VCCI or 0 V, 15-pF load 1.5 3.5 mA
ICC2 Supply current for VCC2 DC to 1 Mbps VI = VCCI or 0 V, 15-pF load 1.5 3.5 mA

Power Dissipation Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER ISO7520C, ISO7521C UNIT
DW [SOIC]
16 PINS
PD Device power dissipation, VCC1 = VCC2 = 5.25 V, TJ = 150°C,
CL = 15 pF, Input a 0.5 MHz 50% duty cycle square wave 		42 mW

6.9 Switching Characteristics: VCC1 and VCC2 at 5 V ± 5%

VCC1 and VCC2 at 5 V ±5%, TA = –40°C to 105°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPLH, tPHL Propagation delay time See Figure 4 9 14 ns
PWD(1) Pulse width distortion |tPHL – tPLH| 0.3 3.7 ns
tsk(pp) Part-to-part skew time 4.9 ns
tsk(o) Channel-to-channel output skew time 3.6 ns
tr Output signal rise time See Figure 4 1 ns
tf Output signal fall time 1 ns
tfs Fail-safe output delay time from input power loss See Figure 5 6 µs
(1) Also known as pulse skew.

6.10 Switching Characteristics: VCC1 at 5 V ± 5%, VCC2 at 3.3 V ± 5%

VCC1 at 5 V ± 5%, VCC2 at 3.3 V ± 5%, TA = –40°C to 105°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPLH, tPHL Propagation delay time See Figure 4 10 17 ns
PWD(1) Pulse width distortion |tPHL – tPLH| 0.5 5.6 ns
tsk(pp) Part-to-part skew time 6.3 ns
tsk(o) Channel-to-channel output skew time 4 ns
tr Output signal rise time See Figure 4 2 ns
tf Output signal fall time 2 ns
tfs Fail-safe output delay time from input power loss See Figure 5 6 µs
(1) Also known as pulse skew.

6.11 Switching Characteristics: VCC1 at 3.3 V ± 5%, VCC2 at 5 V ± 5%

VCC1 at 3.3 V ±5%, VCC2 at 5 V ±5%, TA = –40°C to 105°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPLH, tPHL Propagation delay time See Figure 4 10 17 ns
PWD(1) Pulse width distortion |tPHL – tPLH| 0.5 4 ns
tsk(pp) Part-to-part skew time 8.5 ns
tsk(o) Channel-to-channel output skew time 4 ns
tr Output signal rise time See Figure 4 2 ns
tf Output signal fall time 2 ns
tfs Fail-safe output delay time from input power loss See Figure 5 6 µs
(1) Also known as pulse skew.

6.12 Switching Characteristics: VCC1 and VCC2 at 3.3 V ± 5%

VCC1 and VCC2 at 3.3 V ±5%, TA = –40°C to 105°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPLH, tPHL Propagation delay time See Figure 4 12 20 ns
PWD(1) Pulse width distortion |tPHL – tPLH| 1 5 ns
tsk(pp) Part-to-part skew time 6.8 ns
tsk(o) Channel-to-channel output skew time 5.5 ns
tr Output signal rise time See Figure 4 2 ns
tf Output signal fall time 2 ns
tfs Fail-safe output delay time from input power loss See Figure 5 6 µs
(1) Also known as pulse skew.

6.13 Typical Characteristics

ISO7520C ISO7521C g006_lls984.gifFigure 1. Fail-Safe Voltage Threshold vs Free-Air Temperature
ISO7520C ISO7521C g008_lls984.gifFigure 3. Low-Level Output Current vs Low-Level Output Voltage
ISO7520C ISO7521C g007_lls984.gifFigure 2. High-Level Output Current vs High-Level Output Voltage
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |