SLLSFW9A April   2024  – July 2024 ISO7741TA-Q1 , ISO7741TB-Q1

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety-Related Certifications
    8. 5.8  Safety Limiting Values
    9. 5.9  Electrical Characteristics Transformer
    10. 5.10 Electrical Characteristics—5V Supply
    11. 5.11 Supply Current Characteristics—5V Supply
    12. 5.12 Electrical Characteristics—3.3V Supply
    13. 5.13 Supply Current Characteristics—3.3V Supply
    14. 5.14 Electrical Characteristics—2.5V Supply 
    15. 5.15 Supply Current Characteristics—2.5V Supply
    16. 5.16 Switching Characteristics—5V Supply
    17. 5.17 Switching Characteristics—3.3V Supply
    18. 5.18 Switching Characteristics—2.5V Supply
    19. 5.19 Insulation Characteristics Curves
    20. 5.20 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Electromagnetic Compatibility (EMC) Considerations
      2. 7.3.2 Push-Pull Converter
      3. 7.3.3 Core Magnetization
    4. 7.4 Device Functional Modes
      1. 7.4.1 Device I/O Schematics
      2. 7.4.2 Start-Up Mode
      3. 7.4.3 Operating Mode
      4. 7.4.4 Spread Spectrum Clocking
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Drive Capability
        2. 8.2.2.2 LDO Selection
        3. 8.2.2.3 Diode Selection
        4. 8.2.2.4 Capacitor Selection
        5. 8.2.2.5 Transformer Selection
          1. 8.2.2.5.1 V-t Product Calculation
          2. 8.2.2.5.2 Turns Ratio Estimate
          3. 8.2.2.5.3 Recommended Transformers
      3. 8.2.3 Application Curve
        1. 8.2.3.1 Insulation Lifetime
      4. 8.2.4 System Examples
        1. 8.2.4.1 Higher Output Voltage Designs
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 PCB Material
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DW|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

Overview

The ISO7741T devices have an ON-OFF keying (OOK) modulation scheme to transmit the digital data across a silicon dioxide based isolation barrier. The transmitter sends a high frequency carrier across the barrier to represent one digital state and sends no signal to represent the other digital state. The receiver demodulates the signal after advanced signal conditioning and produces the output through a buffer stage. The ISO7741T also incorporate advanced circuit techniques to maximize the CMTI performance and minimize the radiated emissions due to the high frequency carrier and IO buffer switching.

The transformer driver in ISO7741T is designed for low-cost, small form-factor, isolated DC/DC converters utilizing the push-pull topology. The device includes an oscillator that feeds a gate-drive circuit. The gate-drive, comprising a frequency divider and a break-before-make (BBM) logic, provides two complementary output signals which alternately turn the two output transistors on and off. The output frequency of the oscillator is divided down by two. A subsequent break-before-make logic inserts a dead-time between the high-pulses of the two signals. Before either one of the gates can assume logic high, the BBM logic provides a short time period during which both signals are low and both transistors are high-impedance. This short period, is required to avoid shorting out both ends of the primary. The resulting output signals, present the gate-drive signals for the output transistors.

The conceptual block diagram of a digital capacitive isolator with integrated transformer driver, Figure 7-1 and Figure 7-2, shows a functional block diagram of a typical channel and transformer driver.