SLLSFW9A April   2024  – July 2024 ISO7741TA-Q1 , ISO7741TB-Q1

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety-Related Certifications
    8. 5.8  Safety Limiting Values
    9. 5.9  Electrical Characteristics Transformer
    10. 5.10 Electrical Characteristics—5V Supply
    11. 5.11 Supply Current Characteristics—5V Supply
    12. 5.12 Electrical Characteristics—3.3V Supply
    13. 5.13 Supply Current Characteristics—3.3V Supply
    14. 5.14 Electrical Characteristics—2.5V Supply 
    15. 5.15 Supply Current Characteristics—2.5V Supply
    16. 5.16 Switching Characteristics—5V Supply
    17. 5.17 Switching Characteristics—3.3V Supply
    18. 5.18 Switching Characteristics—2.5V Supply
    19. 5.19 Insulation Characteristics Curves
    20. 5.20 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Electromagnetic Compatibility (EMC) Considerations
      2. 7.3.2 Push-Pull Converter
      3. 7.3.3 Core Magnetization
    4. 7.4 Device Functional Modes
      1. 7.4.1 Device I/O Schematics
      2. 7.4.2 Start-Up Mode
      3. 7.4.3 Operating Mode
      4. 7.4.4 Spread Spectrum Clocking
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Drive Capability
        2. 8.2.2.2 LDO Selection
        3. 8.2.2.3 Diode Selection
        4. 8.2.2.4 Capacitor Selection
        5. 8.2.2.5 Transformer Selection
          1. 8.2.2.5.1 V-t Product Calculation
          2. 8.2.2.5.2 Turns Ratio Estimate
          3. 8.2.2.5.3 Recommended Transformers
      3. 8.2.3 Application Curve
        1. 8.2.3.1 Insulation Lifetime
      4. 8.2.4 System Examples
        1. 8.2.4.1 Higher Output Voltage Designs
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 PCB Material
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DW|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

Diode Selection

A rectifier diode must always possess low-forward voltage to provide as much voltage to the converter output as possible. When used in high-frequency switching applications, such as the ISO7741Tx-Q1 however, the diode must also possess a short recovery time. Schottky diodes meet both requirements and are therefore strongly recommended in push-pull converter designs. A good choice for low-volt applications and ambient temperatures of up to 85°C is the low-cost Schottky rectifier MBR0520L with a typical forward voltage of 275mV at 100mA forward current. For higher output voltages such as ±10V and above use the MBR0530 which provides a higher DC blocking voltage of 30V.

Lab measurements have shown that at temperatures higher than 100°C the leakage currents of the above Schottky diodes increase significantly. These conditions can cause thermal runaway leading to the collapse of the rectifier output voltage. Therefore, for ambient temperatures higher than 85°C use low-leakage Schottky diodes, such as RB168MM-40.

ISO7741TA-Q1 ISO7741TB-Q1 Diode Forward Characteristics for
                                                  MBR0520LFigure 8-2 Diode Forward Characteristics for MBR0520L
ISO7741TA-Q1 ISO7741TB-Q1 Diode Forward Characteristics MBR0530Figure 8-3 Diode Forward Characteristics MBR0530