ZHCSE63A July   2015  – September 2015 ISO7810

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Rating
    6. 6.6  Electrical Characteristics, 5 V
    7. 6.7  Electrical Characteristics, 3.3 V
    8. 6.8  Electrical Characteristics, 2.5 V
    9. 6.9  Switching Characteristics, 5 V
    10. 6.10 Switching Characteristics, 3.3 V
    11. 6.11 Switching Characteristics, 2.5 V
    12. 6.12 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 High Voltage Feature Description
        1. 8.3.1.1 Package Insulation and Safety-Related Specifications
        2. 8.3.1.2 Insulation Characteristics
        3. 8.3.1.3 IEC 60664-1 Ratings Table
        4. 8.3.1.4 Regulatory Information
        5. 8.3.1.5 Safety Limiting Values
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device I/O Schematics
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Electromagnetic Compatibility (EMC) Considerations
      3. 9.2.3 Application Performance Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 PCB Material
    2. 11.2 Layout Guidelines
    3. 11.3 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档　
    2. 12.2 相关链接
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 Glossary
  13. 13机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DWW|16
  • DW|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings(1)

MIN MAX UNIT
Supply voltage(2) VCC1, VCC2 –0.5 6 V
Voltage INx, OUTx –0.5 VCC + 0.5(3) V
Output Current IO -15 15 mA
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values except differential I/O bus voltages are with respect to the local ground terminal (GND1 or GND2) and are peak voltage values.
(3) Maximum voltage must not exceed 6 V.

6.2 ESD Ratings

VALUE UNIT
VESD Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) ±6000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±1500 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN TYP MAX UNIT
VCC1, VCC2 Supply voltage 2.25 5.5 V
IOH High-level output current VCCO(2) = 5 V -4 mA
VCCO = 3.3 V -2
VCCO = 2.5 V -1
IOL Low-level output current VCCO = 5 V 4 mA
VCCO = 3.3 V 2
VCCO = 2.5 V 1
VIH High-level input voltage 0.7 x VCCI(2) VCCI V
VIL Low-level input voltage 0 0.3 x VCCI V
tui Input pulse duration 7 ns
DR Signaling rate 0 100 Mbps
TJ Junction temperature(1) -55 150 °C
TA Ambient temperature -55 25 125 °C
(1) To maintain the recommended operating conditions for TJ, see the Thermal Information table.
(2) VCCI = Input-side VCC; VCCO = Output-side VCC.

6.4 Thermal Information

THERMAL METRIC SOIC UNIT
16 Pins (DW)
RθJA Junction-to-ambient thermal resistance 84.7 °C/W
RθJC(top) Junction-to-case(top) thermal resistance 47.3
RθJB Junction-to-board thermal resistance 49.4
ψJT Junction-to-top characterization parameter 19.1
ψJB Junction-to-board characterization parameter 48.8
RθJC(bottom) Junction-to-case(bottom) thermal resistance n/a

6.5 Power Rating

VALUE UNIT
PD Maximum power dissipation by ISO7810 VCC1 = VCC2 = 5.5 V, TJ = 150°C,
CL = 15 pF, input a 50 MHz 50% duty cycle square wave		 100 mW
PD1 Maximum power dissipation by side-1 of ISO7810 40
PD2 Maximum power dissipation by side-2 of ISO7810 60

6.6 Electrical Characteristics, 5 V

VCC1 = VCC2 = 5 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOH High-level output voltage IOH = –4 mA; see Figure 7 VCCX(1) – 0.4 VCCX(1) – 0.2 V
VOL Low-level output voltage IOL = 4 mA; see Figure 7 0.2 0.4 V
VI(HYS) Input threshold voltage hysteresis 0.1 x VCCX(1) V
IIH High-level input current VIH = VCCX(1) at INx or ENx 10 μA
IIL Low-level input current VIL = 0 V at INx or ENx -10
CMTI Common-mode transient immunity VI = VCCX(1) or 0 V; see Figure 9 50 100 kV/μs
ICC1 Supply current DC Signal DC signal: VI = 0 V (Devices with suffix F) , VI = VCCX (Devices without suffix F) 0.6 1.1 mA
ICC2 0.6 1.1
ICC1 DC signal: VI = VCCX (Devices with suffix F) , VI = 0 V (Devices without suffix F) 1.8 2.7
ICC2 0.7 1.1
ICC1 Supply current 1 Mbps AC Signal: All channels switching with square wave clock input;
CL = 15 pF		 1.2 1.9 mA
ICC2 0.6 1.1
ICC1 10 Mbps 1.2 1.9
ICC2 1.1 1.6
ICC1 100 Mbps 1.3 2
ICC2 5.7 6.7
(1) VCCI = Input-side VCC; VCCO = Output-side VCC.

6.7 Electrical Characteristics, 3.3 V

VCC1 = VCC2 = 3.3 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOH High-level output voltage IOH = –2 mA; see Figure 7 VCCX(1) – 0.4 VCCX(1) – 0.2 V
VOL Low-level output voltage IOL = 2 mA; see Figure 7 0.2 0.4 V
VI(HYS) Input threshold voltage hysteresis 0.1 x VCCX(1) V
IIH High-level input current VIH = VCCX(1) at INx or ENx 10 μA
IIL Low-level input current VIL = 0 V at INx or ENX -10
CMTI Common-mode transient immunity VI = VCCX or 0 V; see Figure 9 50 100 kV/μs
ICC1 Supply current DC Signal DC signal: VI = 0 V (Devices with suffix F) , VI = VCCX (Devices without suffix F) 0.6 1.1 mA
ICC2 0.6 1
ICC1 DC signal: VI = VCCx (Devices with suffix F) , VI = 0 V(Devices without suffix F) 1.8 2.7
ICC2 0.6 1.1
ICC1 Supply current 1 Mbps AC Signal: All channels switching with square wave clock input; CL = 15 pF 1.2 1.9 mA
ICC2 0.6 1.1
ICC1 10 Mbps 1.2 1.9
ICC2 0.9 1.4
ICC1 100 Mbps 1.3 2
ICC2 4.1 4.9
(1) VCCI = Input-side VCC; VCCO = Output-side VCC.

6.8 Electrical Characteristics, 2.5 V

VCC1 = VCC2 = 2.5 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOH High-level output voltage IOH = –1 mA; see Figure 7 VCCX(1) – 0.4 VCCX(1) – 0.2 V
VOL Low-level output voltage IOL = 1 mA; see Figure 7 0.2 0.4 V
VI(HYS) Input threshold voltage hysteresis 0.1 x VCCX(1) V
IIH High-level input current VIH = VCCX(1) at INx or ENx 10 μA
IIL Low-level input current VIL = 0 V at INx or ENx -10
CMTI Common-mode transient immunity VI = VCCX or 0 V; see Figure 9 70 100 kV/μs
ICC1 Supply current DC Signal DC signal: VI = 0 V (Devices with suffix F) , VI = VCCX (Devices without suffix F) 0.6 1.1 mA
ICC2 0.6 1
ICC1 DC signal: VI = VCCX (Devices with suffix F) , VI = 0 V(Devices without suffix F) 1.8 2.7
ICC2 0.6 1.1
ICC1 Supply current 1 Mbps AC Signal: All channels switching with square wave clock input; CL = 15 pF 1.2 1.9 mA
ICC2 0.6 1.1
ICC1 10 Mbps 1.2 1.9
ICC2 0.9 1.3
ICC1 100 Mbps 1.3 2
ICC2 3.3 4.1
(1) VCCI = Input-side VCC; VCCO = Output-side VCC.

6.9 Switching Characteristics, 5 V

VCC1 = VCC2 = 5 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPLH, tPHL Propagation delay time See Figure 7 6 10.7 16 ns
PWD(1) Pulse width distortion |tPHL – tPLH| 0.6 4.6
tsk(pp) (2) Part-to-part skew time 4.5 ns
tr Output signal rise time See Figure 7 2.4 3.9 ns
tf Output signal fall time 2.4 3.9
tfs Default output delay time from input power loss Measured from the time VCC goes below 1.7 V. See Figure 8 0.2 9 μs
tie Time interval error 216 - 1 PRBS data at 100 Mbps 1 ns
(1) Also known as Pulse Skew.
(2) tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same direction while operating at identical supply voltages, temperature, input signals and loads.

6.10 Switching Characteristics, 3.3 V

VCC1 = VCC2 = 3.3 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPLH, tPHL Propagation delay time See Figure 7 6 10.8 16 ns
PWD(1) Pulse width distortion |tPHL – tPLH| 0.7 4.7
tsk(pp) (2) Part-to-part skew time 4.5 ns
tr Output signal rise time See Figure 7 1.3 3
tf Output signal fall time 1.3 3
tfs Default output delay time from input power loss Measured from the time VCC goes below 1.7 V. See Figure 8 0.2 9 μs
tie Time interval error 216 - 1 PRBS data at 100 Mbps 1 ns
(1) Also known as Pulse Skew.
(2) tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same direction while operating at identical supply voltages, temperature, input signals and loads.

6.11 Switching Characteristics, 2.5 V

VCC1 = VCC2 = 2.5 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPLH, tPHL Propagation delay time See Figure 7 7.5 11.7 17.5 ns
PWD(1) Pulse width distortion |tPHL – tPLH| 0.7 4.7
tsk(pp) (2) Part-to-part skew time 4.5 ns
tr Output signal rise time See Figure 7 1.8 3.5
tf Output signal fall time 1.8 3.5
tfs Default output delay time from input power loss Measured from the time VCC goes below 1.7 V. See Figure 8 0.2 9 μs
tie Time interval error 216 - 1 PRBS data at 100 Mbps 1 ns
(1) Also known as Pulse Skew.
(2) tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same direction while operating at identical supply voltages, temperature, input signals and loads.

6.12 Typical Characteristics

ISO7810 ISO7810F D001_SLLSEP1.gif
TA = 25°C CL = 15 pF
Figure 1. Supply Current vs Data Rate (with 15 pF Load)
ISO7810 ISO7810F D003_SLLSEM2.gif
TA = 25°C
Figure 3. High-Level Output Voltage vs High-level Output Current
ISO7810 ISO7810F D005_SLLSEM2.gif
Figure 5. Power Supply Undervoltage Threshold vs Free-Air Temperature
ISO7810 ISO7810F D002_SLLSEP1.gif
TA = 25°C CL = No Load
Figure 2. Supply Current vs Data Rate (with No Load)
ISO7810 ISO7810F D004_SLLSEM2.gif
TA = 25°C
Figure 4. Low-Level Output Voltage vs Low-Level Output Current
ISO7810 ISO7810F D006_SLLSEP0.gif
A.
Figure 6. Propagation Delay Time vs Free-Air Temperature
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