SLLSFS9C September   2023  – October 2024 ISOM8110 , ISOM8111 , ISOM8112 , ISOM8113 , ISOM8115 , ISOM8116 , ISOM8117 , ISOM8118

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Thermal Information
    4. 6.4 Insulation Specifications
    5. 6.5 Safety-Related Certifications
    6. 6.6 Safety Limiting Values
    7. 6.7 Electrical Characteristics
    8. 6.8 Switching Characteristics
    9. 6.9 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Typical Application
        1. 9.1.1.1 Design Requirements
        2. 9.1.1.2 Detailed Design Procedure
          1. 9.1.1.2.1 Sizing RPULLUP
          2. 9.1.1.2.2 Sizing RIN
        3. 9.1.1.3 Application Curves
    2. 9.2 Power Supply Recommendations
    3. 9.3 Layout
      1. 9.3.1 Layout Guidelines
      2. 9.3.2 Layout Example
      3. 9.3.3 Reflow Profile
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.3 Thermal Information

THERMAL METRIC(1) ISOM811x UNIT
DFG (SOIC) DFH (SOIC)
4 PINS 4 PINS
RθJA Junction-to-ambient thermal resistance 283.9 288.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 173.1 173.6 °C/W
RθJB Junction-to-board thermal resistance 201.4 192.9 °C/W
ψJT Junction-to-top characterization parameter 125.1 121.5 °C/W
ψJB Junction-to-board characterization parameter 198.0 190.0 °C/W
(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics application note.
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