Many applications in harsh industrial environment are sensitive to disturbances such as electrostatic discharge (ESD), electrical fast transient (EFT), surge and electromagnetic emissions. Although system-level performance and reliability depends, to a large extent, on the application board design and layout, the ISOS141-SEP device incorporates many chip-level design improvements for overall system robustness. Some of these improvements include:

• Robust ESD protection cells for input and output signal pins and inter-chip bond pads.
• Low-resistance connectivity of ESD cells to supply and ground pins.
• Enhanced performance of high voltage isolation capacitor for better tolerance of ESD, EFT and surge events.
• Bigger on-chip decoupling capacitors to bypass undesirable high energy signals through a low impedance path.
• PMOS and NMOS devices isolated from each other by using guard rings to avoid triggering of parasitic SCRs.
• Reduced common mode currents across the isolation barrier by ensuring purely differential internal operation.