ZHCSNI5 May 2021 ISOS141-SEP
PRODUCTION DATA
- 1 特性
- 2 应用
- 3 说明
- 4 Revision History
- 5 Pin Configuration and Functions
-
6 Specifications
- 6.1 Absolute Maximum Ratings
- 6.2 ESD Ratings
- 6.3 Recommended Operating Conditions
- 6.4 Thermal Information
- 6.5 Power Ratings
- 6.6 Insulation Specifications
- 6.7 Safety-Related Certifications
- 6.8 Safety Limiting Values
- 6.9 Electrical Characteristics—5-V Supply
- 6.10 Supply Current Characteristics—5-V Supply
- 6.11 Electrical Characteristics—3.3-V Supply
- 6.12 Supply Current Characteristics—3.3-V Supply
- 6.13 Electrical Characteristics—2.5-V Supply
- 6.14 Supply Current Characteristics—2.5-V Supply
- 6.15 Switching Characteristics—5-V Supply
- 6.16 Switching Characteristics—3.3-V Supply
- 6.17 Switching Characteristics—2.5-V Supply
- 6.18 Insulation Characteristics Curves
- 6.19 Typical Characteristics
- 7 Operating Life Deration
- 8 Parameter Measurement Information
- 9 Detailed Description
- 10Application and Implementation
- 11Power Supply Recommendations
- 12Layout
- 13Device and Documentation Support
- 14Mechanical, Packaging, and Orderable Information
10.2 Typical Application
#SLLSEF11669 shows ISOS141-SEP in the GaN half bridge circuit being used to isolate PWM signals from the half-bridge controller on the primary side to the half-bridge gate driver on the secondary side to achieve higher efficiency through synchronous rectification.
Figure 10-1 Isolated 75V to 5V 50W GaN-Based Half-Bridge Topology