ZHCSNF0B May   2018  – October 2021 ISOW1412 , ISOW1432

PRODMIX  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. 说明(续)
  6. Device Comparison Table
  7. Pin Configuration and Functions
  8. Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  Recommended Operating Conditions
    3. 8.3  Thermal Information
    4. 8.4  Power Ratings
    5. 8.5  Insulation Specifications
    6. 8.6  Safety-Related Certifications
    7. 8.7  Safety Limiting Values
    8. 8.8  Electrical Characteristics
    9. 8.9  Supply Current Characteristics at VISOOUT = 3.3 V
    10. 8.10 Supply Current Characteristics at  VISOOUT = 5 V
    11. 8.11 Switching Characteristics at VISOOUT = 3.3 V
    12. 8.12 Switching Characteristics at VISOOUT = 5 V
    13. 8.13 Insulation Characteristics Curves
    14. 8.14 Typical Characteristics
  9. Parameter Measurement Information
  10. 10Detailed Description
    1. 10.1 Overview
    2. 10.2 Power Isolation
    3. 10.3 Signal Isolation
    4. 10.4 RS-485
    5. 10.5 Functional Block Diagram
    6. 10.6 Feature Description
      1. 10.6.1 Power-Up and Power-Down Behavior
      2. 10.6.2 Protection Features
      3. 10.6.3 Failsafe Receiver
      4. 10.6.4 Glitch-Free Power Up and Power Down
    7. 10.7 Device Functional Modes
    8. 10.8 Device I/O Schematics
  11. 11Application and Implementation
    1. 11.1 Application Information
    2. 11.2 Typical Application
      1. 11.2.1 Design Requirements
      2. 11.2.2 Detailed Design Procedure
        1. 11.2.2.1 Data Rate, Bus Length and Bus Loading
        2. 11.2.2.2 Stub Length
        3. 11.2.2.3 Insulation Lifetime
  12. 12Power Supply Recommendations
  13. 13Layout
    1. 13.1 Layout Guidelines
    2. 13.2 Layout Example
  14. 14Device and Documentation Support
    1. 14.1 Documentation Support
      1. 14.1.1 Related Documentation
    2. 14.2 Receiving Notification of Documentation Updates
    3. 14.3 支持资源
    4. 14.4 Trademarks
    5. 14.5 Electrostatic Discharge Caution
    6. 14.6 术语表
  15. 15Mechanical, Packaging, and Orderable Information

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Insulation Lifetime

Insulation lifetime projection data is collected by using industry-standard Time Dependent Dielectric Breakdown (TDDB) test method. In this test, all pins on each side of the barrier are tied together creating a two-terminal device and high voltage applied between the two sides as shown in below TDDB test setup. The insulation breakdown data is collected at various high voltages switching at 60 Hz over temperature. For reinforced insulation, VDE standard requires the use of TDDB projection line with failure rate of less than 1 part per million (ppm). Even though the expected minimum insulation lifetime is 20 years at the specified working isolation voltage, VDE reinforced certification requires additional safety margin of 20% for working voltage and 87.5% for lifetime which translates into minimum required insulation lifetime of 37.5 years at a working voltage that's 20% higher than the specified value.  

GUID-5EA93C46-0CCE-439C-95F2-1A7C28A33FA3-low.gif Figure 11-5 Test Setup for Insulation Lifetime Measurement

The insulation lifetime projection data shows the intrinsic capability of the isolation barrier to withstand high voltage stress over its lifetime. Based on the TDDB data, the intrinsic capability of the insulation is 1000 VRMS with a lifetime of 1184 years.

GUID-750563EF-5F91-4922-A8EF-2731637F43D1-low.png Figure 11-6 Insulation Lifetime Projection Data