米6体育平台手机版

ZHCSLR8B june 2021 – april 2023 JFE150

PRODUCTION DATA

封装选项

机械数据 (封装 | 引脚)

DCK|5
- MPDS025J
DBV|5
- MPDS018T

散热焊盘机械数据 (封装 | 引脚)

订购信息

6.5 Electrical Characteristics

at T_A = 25°C, I_DS = 2 mA, and V_DS = 10 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
NOISE
e_n	Input-referred voltage noise density	I_DS= 100 µA , V_DS = 5 V	f = 10 Hz		3		nV/√Hz
		I_DS= 100 µA , V_DS = 5 V	f = 1 kHz		2
		I_DS= 2 mA, V_DS = 5 V	f = 10 Hz		1.6
		I_DS= 2 mA, V_DS = 5 V	f = 1 kHz		0.9
		I_DS= 5 mA, V_DS = 5 V	f = 10 Hz		1.8
		I_DS= 5 mA, V_DS = 5 V	f = 1 kHz		0.8
	Input-referred voltage noise	f = 0.1 Hz to 10 Hz, V_DS = 5 V	I_DS= 100 µA		0.19		µV_PP
			I_DS= 2 mA		0.09
			I_DS= 5 mA		0.13
e_i	Input current noise	f = 1 kHz, V_DS = 5 V			1.8		fA/√Hz
INPUT CURRENT
I_G	Input gate current	V_DS = 2 V, V_GS = –0.7 V, V_VCH= 5 V, V_VCL= –5 V			0.2	±10	pA
		V_DS = 0 V, V_GS = –30 V			0.2
			T_A = –40°C to +85°C			±2000
			T_A = –40°C to +125°C			±10000
INPUT VOLTAGE
V_GSS	Gate-to-source breakdown voltage	V_DS = 0 V, \|I_G\| < 100 µA				−40	V
V_GSC	Gate-to-source cutoff voltage	V_DS = 10 V, I_DS = 0.1 µA		−1.5	−1.2	−0.9	V
V_GS	Gate-to-source voltage	I_DS = 100 µA		–1.3		–0.7	V
V_GS	Gate-to-source voltage	I_DS = 2 mA		–1.1		–0.5	V
INPUT IMPEDANCE
R_IN	Gate input resistance	V_GS = –5 V to 0 V_,V_DS = 0 V			1		TΩ
C_ISS	Input capacitance	V_DS = 0 V			30		pF
C_ISS	Input capacitance	V_DS = 5 V			24
C_RSS	Reverse transfer capacitance	V_DS = 0 V			7
OUTPUT
I_DSS	Drain-to-source saturation current	V_DS = 10 V, V_GS = 0 V		24	35	46	mA
I_DSS	Drain-to-source saturation current	V_DS = 10 V, V_GS = 0 V	T_A = –40°C to +125°C	22		57	mA
gm	Transconductance	I_DS = 100 µA			3		mS
gm	Transconductance	I_DS = 2 mA			18		mS
G_FS	Full conduction transconductance	V_DS = 10 V, V_GS = 0 V		55	68	80	mS
V_DSS	Drain-to-source breakdown voltage	\|I_DS\| < 100 µA, V_GS = –2 V		40			V
C_OSS	Output capacitance	V_DS = 5 V			8		pF