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SLOS013C March 1987 – March 2016 LF347 , LF347B

PRODUCTION DATA.

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

D|14
N|14

散热焊盘机械数据 (封装 | 引脚)

订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
V_CC+	Supply voltage		18	V
V_CC–	Supply voltage		–18	V
V_ID	Differential input voltage	–30	30	V
V_I	Input voltage⁽²⁾	–15	15	V
	Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds		260	°C
T_J	Operating virtual junction temperature		150	°C
T_stg	Storage temperature	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Unless otherwise specified, the absolute maximum negative input voltage is equal to the negative power supply voltage.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
T_A	free-air temperature	0	70	°C
V_CC+	Supply voltage	3.5	18	V
V_CC–	Supply voltage	–3.5	–18	V
V_CM	Common-mode voltage	V_CC– + 4	V_CC+ – 4	V
T_A	Operating temperature	0	70	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		LF347, LF347B		UNIT
		D (SOIC)	N (PDIP)
		14 PINS	14 PINS
R_θJA	Junction-to-ambient thermal resistance	74.4	42.7	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	32.5	29.2	°C/W
R_θJB	Junction-to-board thermal resistance	28.9	22.6	°C/W
ψ_JT	Junction-to-top characterization parameter	3.7	13.5	°C/W
ψ_JB	Junction-to-board characterization parameter	28.6	22.5	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics: LF347

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
V_IO	Input offset voltage	V_IC= 0, R_S = 10 kΩ	25°C		5	10	mV
V_IO	Input offset voltage	V_IC= 0, R_S = 10 kΩ	Full range⁽¹⁾			13	mV
α_VIO	Average temperature coefficient of input offset voltage	V_IC= 0, R_S = 10 kΩ			18		µV/°C
I_IO	Input offset current⁽²⁾	V_IC= 0	25°C		25	100	pA
I_IO	Input offset current⁽²⁾	V_IC= 0	70°C			4	nA
I_IB	Input bias current⁽²⁾	V_IC= 0	25°C		50	200	pA
I_IB	Input bias current⁽²⁾	V_IC= 0	70°C			8	nA
V_ICR	Common-mode input voltage	Lower limit of range		–11	–12		V
V_ICR	Common-mode input voltage	Upper limit of range		11	15		V
V_OM	Maximum peak output voltage swing	R_L = 10 kΩ		±12	±13.5		V
A_VD	Large signal differential voltage	V_O = ±10 V, R_L = 2 kΩ	25°C	25	100		V/mV
A_VD	Large signal differential voltage	V_O = ±10 V, R_L = 2 kΩ	Full range	15			V/mV
r_i	Input resistance	T_A= 25°C			10¹²		Ω
CMRR	Common-mode rejection ratio	R_S ≤ 2 kΩ		70	100		dB
k_SVR	Supply-voltage rejection ratio	See ⁽³⁾		70	100		dB
I_CC	Supply current				8	11	mA

(1) Full range is 0°C to 70°C.

(2) Input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive. Pulse techniques must be used that will maintain the junction temperatures as close to the ambient temperature as possible.

(3) Supply-voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously.

6.6 Electrical Characteristics: LF347B

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
V_IO	Input offset voltage	V_IC= 0, R_S = 10 kΩ	25°C		3	5	mV
V_IO	Input offset voltage	V_IC= 0, R_S = 10 kΩ	Full range⁽¹⁾			7	mV
α_VIO	Average temperature coefficient of input offset voltage	V_IC= 0, R_S = 10 kΩ			18		µV/°C
I_IO	Input offset current⁽²⁾	V_IC= 0	25°C		25	100	pA
I_IO	Input offset current⁽²⁾	V_IC= 0	70°C			4	nA
I_IB	Input bias current⁽²⁾	V_IC= 0	25°C		50	200	pA
I_IB	Input bias current⁽²⁾	V_IC= 0	70°C			8	nA
V_ICR	Common-mode input voltage	Lower limit of range		–11	–12		V
V_ICR	Common-mode input voltage	Upper limit of range		11	15		V
V_OM	Maximum peak output voltage swing	R_L = 10 kΩ		±12	±13.5		V
A_VD	Large signal differential voltage	V_O = ±10 V, R_L = 2 kΩ	25°C	50	100		V/mV
A_VD	Large signal differential voltage	V_O = ±10 V, R_L = 2 kΩ	Full range	25			V/mV
r_i	Input resistance	T_{A = 25°C}			10¹²		Ω
CMRR	Common-mode rejection ratio	R_{S ≤ 2 kΩ}		80	100		dB
k_SVR	Supply-voltage rejection ratio	See ⁽³⁾		80	100		dB
I_CC	Supply current				8	11	mA

(1) Full range is 0°C to 70°C.

(3) Supply-voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously.

6.7 Switching Characteristics

V_CC± = ±15 V, T_A= 25°C

PARAMETER		TEST CONDITIONS		MIN	TYP	UNIT
SR	Slew rate at unity gain	V_I = 10 V, C_L = 100 pF,	R_L = 2 kΩ, See Figure 5	8	13	V/μs
B₁	Unity-gain bandwidth				3	MHz
V_O1 / V_O2	Crosstalk attenuation	f = 1 kHZ			120	dB
V_n	Equivalent input noise voltage	R_S = 20 Ω	f = 1 kHz		18	nV/√Hz
V_n	Equivalent input noise voltage	R_S = 20 Ω	f = 10 Hz to 10 kHz		4	μV
I_n	Equivalent input noise current	R_S = 20 Ω,	f = 1 kHz		0.01	pA/√Hz

6.8 Typical Characteristics

Figure 1. Input Bias Current vs Free-Air Temperature

Figure 3. Maximum Peak Output Voltage vs Load Resistance

Figure 2. Maximum Peak Output Voltage vs Frequency

Figure 4. Large-Signal Differential Voltage Amplification
and Phase Shift vs Frequency