SNVS039J June   2000  – April 2015 LM1086

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Ripple Rejection
      2. 7.3.2 Load Regulation
      3. 7.3.3 Overload Recovery
    4. 7.4 Device Functional Modes
      1. 7.4.1 Output Voltage
      2. 7.4.2 Stability Consideration
      3. 7.4.3 Protection Diodes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1  1.2-V to 15-V Adjustable Regulator
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2  Adjustable at 5 V
      3. 8.2.3  5-V Regulator with Shutdown
      4. 8.2.4  Battery Charger
      5. 8.2.5  Adjustable Fixed Regulator
      6. 8.2.6  Regulator With Reference
      7. 8.2.7  High Current Lamp Driver Protection
      8. 8.2.8  Battery Backup Regulated Supply
      9. 8.2.9  Ripple Rejection Enhancement
      10. 8.2.10 Automatic Light Control
      11. 8.2.11 Remote Sensing
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Development Support
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

11.3 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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