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ZHCSOD7A February 2023 – September 2023 LM2101

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

D|8
DSG|8

散热焊盘机械数据 (封装 | 引脚)

8.2.2.3 Select External Gate Driver Resistor

The external gate driver resistor, R_GATE, is sized to reduce ringing caused by parasitic inductances and capacitances and also to limit the current coming out of the gate driver.

The peak GH pullup current is calculated in Equation 12.

Equation 8.

I_{G H H} = \frac{V_{G V D D} - V_{D H}}{R_{G H H} + R_{G A T E} + R_{G F E T_I N T}}

where

I_GHH = GH Peak pullup current
V_DH = Bootstrap diode forward voltage drop
R_GHH = Gate driver internal GH pullup resistance, estimated from the testing conditions, that is R_GHH = V_{GH_H} / I_GH
R_GATE = External gate drive resistance
R_{GFET_INT} = MOSFET internal gate resistance, provided by transistor data sheet

Similarly, the peak GH pulldown current is shown in Equation 13.

Equation 9.

I_{G H L} = \frac{V_{G V D D} - V_{D H}}{R_{G H L} + R_{G A T E} + R_{G F E T_I N T}}

where

R_GHL is the GH pulldown resistance

The peak GL pullup current is shown in Equation 14.

Equation 10.

I_{G L H} = \frac{V_{G V D D}}{R_{G L H} + R_{G A T E} + R_{G F E T_I N T}}

where

R_GLH is the GL pullup resistance

The peak GL pulldown current is shown in Equation 15.

Equation 11.

I_{G L L} = \frac{V_{G V D D}}{R_{G L L} + R_{G A T E} + R_{G F E T_I N T}}

where

R_GLL is the GL pulldown resistance

For some scenarios, if the applications require fast turnoff, an anti-paralleled diode on R_Gate could be used to bypass the external gate drive resistor and speed up turnoff transition.