米6体育平台手机版

ZHCSOD7A February 2023 – September 2023 LM2101

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

D|8
DSG|8

散热焊盘机械数据 (封装 | 引脚)

6.5 Electrical Characteristics

V_GVDD = V_BST = 12 V, GND = V_SH = 0 V, No Load on GL or GH, T_J = 25°C (unless otherwise noted).

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENTS
I_GVDD	GVDD quiescent current	V_INL = V_INH = 0 V		430		μA
I_DDO	GVDD operating current	f = 50 kHz, C_LOAD = 0		0.56		mA
I_BST	Total BST quiescent current	V_INL = V_INH = 0 V, VDD = 12 V		150		uA
I_BSTO	Total BST operating current	f = 50 kHz, C_LOAD = 0		0.16		mA
I_BSTS	BST to GND quiescent current	V_SH = V_BST = 95 V, GVDD = 12 V		33.3		μA
I_BSTSO	BST to GND operating current	f = 50 kHz, C_LOAD = 0		0.07		mA
INPUT
V_HIT	Input voltage high threshold	-40°C to 125°C		1.45	2	V
V_LIT	Input voltage low threshold	-40°C to 125°C	0.8	1.3		V
V_IHYS	Input voltage hysteresis			0.15		V
R_IN	Input pulldown resistance	V_IN= 3 V		200		kΩ
UNDERVOLTAGE PROTECTION (UVLO)
V_GVDDR	GVDD rising threshold	V_GVDDR= V_GVDD - GND, -40°C to 125°C		8.15	8.75	V
V_GVDDF	GVDD falling threshold	V_GVDDF= V_GVDD - GND, -40°C to 125°C	6.75	7.7		V
V_DDHYS	GVDD threshold hysteresis			0.45		V
V_BSTR	VBST rising threshold	V_BSTR= V_BST - V_SH,-40°C to 125°C		7.6	8.5	V
V_BSTF	VBST falling threshold	V_BSTR= V_BST - V_SH,-40°C to 125°C	6.25	7.15		V
V_BSTHYS	VBST threshold hysteresis			0.45		V
LO GATE DRIVER
V_{GL_L}	Low level output voltage	I_GL = 100 mA, V_{GL_L} = V_GL – GND		0.25		V
V_{GL_H}	High level output voltage	I_GL = -100 mA, V_{GL_H} = V_GVDD – V_GL		0.8		V
	Peak pullup current⁽¹⁾	V_GL = 0V		0.5		A
	Peak pulldown current⁽¹⁾	V_GL = 12V		0.8		A
HO GATE DRIVER
V_{GH_L}	Low level output voltage	I_GH = 100 mA, V_{GH_L} = V_GH – V_SH		0.25		V
V_{GH_H}	High level output voltage	I_GH = –100 mA, V_{GH_H} = V_BST– V_GH		0.8		V
	Peak pullup current⁽¹⁾	V_GH = 0V		0.5		A
	Peak pulldown current⁽¹⁾	V_GH = 12V		0.8		A

(1) Parameter not tested in production.