ZHCST88A September   2023  – October 2023 LM2104

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Timing Diagrams
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Start-Up and UVLO
      2. 7.3.2 Input Stages
      3. 7.3.3 Level Shift
      4. 7.3.4 Output Stages
      5. 7.3.5 SH Transient Voltages Below Ground
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Select Bootstrap and GVDD Capacitor
        2. 8.2.2.2 Select External Gate Driver Resistor
        3. 8.2.2.3 Estimate the Driver Power Loss
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 静电放电警告
    7. 11.7 术语表
  13. 12Mechanical, Packaging, and Orderable Information

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • D|8
散热焊盘机械数据 (封装 | 引脚)

6.5 Electrical Characteristics

VGVDD = VBST = 12 V, GND = VSH = 0 V, No Load on GL or GH, TJ = 25°C (unless otherwise noted). 
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENTS
IGVDD GVDD quiescent current VIN = VSD = 0 V 430 μA
IDDO GVDD operating current f = 50 kHz, CLOAD = 0 0.56 mA
IBST Total BST quiescent current VIN = VSD = 0 V, VDD = 12 V 150 uA
IBSTO Total BST operating current f = 50 kHz, CLOAD = 0 0.16 mA
IBSTS BST to GND quiescent current VSH = VBST = 95 V, GVDD = 12 V 33.3 μA
IBSTO BST to GND operating current f = 50 kHz, CLOAD = 0 0.07 mA
INPUT
VHIT_IN Input voltage high threshold -40°C to 125°C 1.45 2 V
VHIT_SD Input voltage high threshold -40°C to 125°C 1.45 2 V
VLIT_IN Input voltage low threshold -40°C to 125°C 0.8 1.3 V
VLIT_SD Input voltage low threshold -40°C to 125°C 0.8 1.3 V
VIHYS_IN Input voltage hysteresis 0.15 V
VIHYS_SD Input voltage hysteresis 0.15 V
RIN_IN Input pulldown resistance VIN = 3 V 200 kΩ
RIN_SD Input pulldown resistance VSD = 3 V 200 kΩ
UNDERVOLTAGE PROTECTION (UVLO)
VGVDDR GVDD rising threshold VGVDDR = VGVDD - GND, -40°C to 125°C 8.15 8.75 V
VGVDDF GVDD falling threshold VGVDDF = VGVDD - GND, -40°C to 125°C 6.75 7.7 V
VGVDDHYS GVDD threshold hysteresis 0.45 V
VBSTR VBST rising threshold VBSTR = VBST - VSH, -40°C to 125°C 7.6 8.5 V
VBSTF VBST falling threshold VBSTF = VBST - VSH, -40°C to 125°C 6.25 7.15 V
VBSTHYS VBST threshold hysteresis 0.45 V
LO GATE DRIVER
VGL_L Low level output voltage IGL = 100 mA, VGL_L = VGL – GND 0.25 V
VGL_H High level output voltage IGL = -100 mA, VGL_H = VGVDD – VGL 0.8 V
Peak pullup current(1) VGL = 0V 0.5 A
Peak pulldown current(1) VGL = 12V 0.8 A
HO GATE DRIVER
VGH_L Low level output voltage IGH = 100 mA, VGH_L = VGH – VSH 0.25 V
VGH_H High level output voltage IGH = –100 mA, VGH_H = VBST – VGH 0.8 V
Peak pullup current(1) VGH = 0V 0.5 A
Peak pulldown current(1) VGH = 12V 0.8 A
(1) Parameter not tested in production.
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |