The choice of power MOSFETs has significant impact on DC/DC regulator performance. A MOSFET with low on-state resistance, R_DS(on), reduces conduction loss, whereas low parasitic capacitances enable faster transition times and reduced switching loss. Normally, the lower the R_DS(on) of a MOSFET, the higher the gate charge and output charge (Q_G and Q_OSS, respectively), and vice versa. As a result, the product of R_DS(on) and Q_G is commonly specified as a MOSFET figure-of-merit. Low thermal resistance of a given package ensures that the MOSFET power dissipation does not result in excessive MOSFET die temperature.

The main parameters affecting power MOSFET selection in a LM25148 application are as follows:

• R_DS(on) at V_GS = 5 V
• Drain-source voltage rating, BV_DSS, typically 40 V or 60 V, depending on the maximum input voltage
• Gate charge parameters at V_GS = 5 V
• Output charge, Q_OSS, at the relevant input voltage
• Body diode reverse recovery charge, Q_RR
• Gate threshold voltage, V_GS(th), derived from the Miller plateau evident in the Q_G versus V_GS plot in the MOSFET data sheet. With a Miller plateau voltage typically in the range of 2 V to 3 V, the 5-V gate drive amplitude of the LM25148 provides an adequately enhanced MOSFET when on and a margin against Cdv/dt shoot-through when off.

The MOSFET-related power losses for one channel are summarized by the equations presented in Table 9-1, where suffixes one and two represent high-side and low-side MOSFET parameters, respectively. While the influence of inductor ripple current is considered, second-order loss modes, such as those related to parasitic inductances and SW node ringing, are not included. Consult the LM25148 Quickstart Calculator to assist with power loss calculations.

Table 9-1 MOSFET Power Losses

POWER LOSS MODE	HIGH-SIDE MOSFET	LOW-SIDE MOSFET
MOSFET conduction(2)(3)
MOSFET switching		Negligible
MOSFET gate drive(1)
MOSFET output charge(4)
Body diode conduction	N/A
Body diode reverse recovery(5)

The high-side (control) MOSFET carries the inductor current during the PWM on-time (or D interval) and typically incurs most of the switching losses. It is, therefore, imperative to choose a high-side MOSFET that balances conduction and switching loss contributions. The total power dissipation in the high-side MOSFET is the sum of the losses due to conduction, switching (voltage-current overlap), output charge, and typically two-thirds of the net loss attributed to body diode reverse recovery.

The low-side (synchronous) MOSFET carries the inductor current when the high-side MOSFET is off (or 1–D interval). The low-side MOSFET switching loss is negligible as it is switched at zero voltage – current just commutates from the channel to the body diode or vice versa during the transition dead-times. LM25148, with its adaptive gate drive timing, minimizes body diode conduction losses when both MOSFETs are off. Such losses scale directly with switching frequency.

In high step-down ratio applications, the low-side MOSFET carries the current for a large portion of the switching period. Therefore, to attain high efficiency, it is critical to optimize the low-side MOSFET for low R_DS(on). In cases where the conduction loss is too high or the target R_DS(on) is lower than available in a single MOSFET, connect two low-side MOSFETs in parallel. The total power dissipation of the low-side MOSFET is the sum of the losses due to channel conduction, body diode conduction, and typically one-third of the net loss attributed to body diode reverse recovery. The LM25148 is well suited to drive TI's portfolio of NexFET™ power MOSFETs.