ZHCSLO7B December 2020 – January 2023 LM25149-Q1
PRODUCTION DATA
- 1 特性
- 2 应用
- 3 说明
- 4 Revision History
- 5 说明（续）
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 Input Voltage Range (VIN)
- 8.3.2 High-Voltage Bias Supply Regulator (VCC, VCCX, VDDA)
- 8.3.3 Precision Enable (EN)
- 8.3.4 Power-Good Monitor (PG)
- 8.3.5 Switching Frequency (RT)
- 8.3.6 Active EMI Filter
- 8.3.7 Dual Random Spread Spectrum (DRSS)
- 8.3.8 Soft Start
- 8.3.9 Output Voltage Setpoint (FB)
- 8.3.10 Minimum Controllable On Time
- 8.3.11 Error Amplifier and PWM Comparator (FB, EXTCOMP)
- 8.3.12 Slope Compensation
- 8.3.13 Inductor Current Sense (ISNS+, VOUT)
- 8.3.14 Hiccup Mode Current Limiting
- 8.3.15 High-Side and Low-Side Gate Drivers (HO, LO)
- 8.3.16 Output Configurations (CNFG)
- 8.3.17 Single-Output Dual-Phase Operation
- 8.4 Device Functional Modes
-
9 Application and Implementation
- 9.1 Application Information
- 9.2
Typical Applications
- 9.2.1
Design 1 – High-Efficiency 2.1-MHz Synchronous
Buck Regulator
- 9.2.1.1 Design Requirements
- 9.2.1.2
Detailed Design Procedure
- 9.2.1.2.1 Custom Design With WEBENCH® Tools
- 9.2.1.2.2 Custom Design With Excel Quickstart Tool
- 9.2.1.2.3 Buck Inductor
- 9.2.1.2.4 Current-Sense Resistance
- 9.2.1.2.5 Output Capacitors
- 9.2.1.2.6 Input Capacitors
- 9.2.1.2.7 Frequency Set Resistor
- 9.2.1.2.8 Feedback Resistors
- 9.2.1.2.9 Compensation Components
- 9.2.1.2.10 Active EMI Components
- 9.2.1.3 Application Curves
- 9.2.2 Design 2 – High Efficiency 440-kHz Synchronous Buck Regulator
- 9.2.3 Design 3 – Dual-Phase 400-kHz 20-A Synchronous Buck Regulator
- 9.2.1
Design 1 – High-Efficiency 2.1-MHz Synchronous
Buck Regulator
- 9.3 Power Supply Recommendations
- 9.4 Layout
- 10Device and Documentation Support
- 11Mechanical, Packaging, and Orderable Information
9.1.1.4 Power MOSFETs
The choice of power MOSFETs has significant impact on DC/DC regulator performance. A MOSFET with low on-state resistance, RDS(on), reduces conduction loss, whereas low parasitic capacitances enable faster transition times and reduced switching loss. Normally, the lower the RDS(on) of a MOSFET, the higher the gate charge and output charge (QG and QOSS, respectively), and vice versa. As a result, the product of RDS(on) and QG is commonly specified as a MOSFET figure-of-merit. Low thermal resistance of a given package ensures that the MOSFET power dissipation does not result in excessive MOSFET die temperature.
The main parameters affecting power MOSFET selection in a LM25149-Q1 application are as follows:
- RDS(on) at VGS = 4.5 V
- Drain-source voltage rating, BVDSS, typically 40 V, 60 V, depending on the maximum input voltage
- Gate charge parameters at VGS = 4.5 V
- Output charge, QOSS, at the relevant input voltage
- Body diode reverse recovery charge, QRR
- Gate threshold voltage, VGS(th), derived from the Miller plateau evident in the QG versus VGS plot in the MOSFET data sheet. With a Miller plateau voltage typically in the range of 2 V to 3 V, the 5-V gate drive amplitude of the LM25149-Q1 provides an adequately enhanced MOSFET when on and a margin against Cdv/dt shoot-through when off.
The MOSFET-related power losses for one channel are summarized by the equations presented in #GUID-D82FC034-E5A9-4FDF-9C79-DEB8347DE934/SNVS8965419, where suffixes one and two represent high-side and low-side MOSFET parameters, respectively. While the influence of inductor ripple current is considered, second-order loss modes, such as those related to parasitic inductances and SW node ringing, are not included. Consult the LM25149-Q1 Quickstart Calculator.
| POWER LOSS MODE | HIGH-SIDE MOSFET | LOW-SIDE MOSFET |
|---|---|---|
| MOSFET conduction(2)(3) |  |  |
| MOSFET switching |  | Negligible |
| MOSFET gate drive(1) |  |  |
| MOSFET output charge(4) |  | |
| Body diode conduction | N/A |  |
| Body diode reverse recovery(5) |  | |
The high-side (control) MOSFET carries the inductor current during the PWM on time (or D interval) and typically incurs most of the switching losses. The high-side (control) MOSFET is therefore imperative to choose a high-side MOSFET that balances conduction and switching loss contributions. The total power dissipation in the high-side MOSFET is the sum of the losses due to conduction, switching (voltage-current overlap), output charge, and typically two-thirds of the net loss attributed to body diode reverse recovery.
The low-side (synchronous) MOSFET carries the inductor current when the high-side MOSFET is off (or during the 1–D interval). The low-side MOSFET switching loss is negligible as it is switched at zero voltage – current just communicates from the channel to the body diode or vice versa during the transition deadtimes. LM25149-Q1, with its adaptive gate drive timing, minimizes body diode conduction losses when both MOSFETs are off. Such losses scale directly with switching frequency.
In high step-down ratio applications, the low-side MOSFET carries the current for a large portion of the switching period. Therefore, to attain high efficiency, optimizing the low-side MOSFET for low RDS(on) is critical. In cases where the conduction loss is too high or the target RDS(on) is lower than available in a single MOSFET, connect two low-side MOSFETs in parallel. The total power dissipation of the low-side MOSFET is the sum of the losses due to channel conduction, body diode conduction, and typically one-third of the net loss attributed to body diode reverse recovery. The LM25149-Q1 is well suited to drive TI's portfolio of NexFET™ power MOSFET.