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SNVS082E December 2001 – May 2016 LM2593HV

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

KTW|7
- MPSF015
NDZ|7
- MMSF005

散热焊盘机械数据 (封装 | 引脚)

KTW|7
- PPTD278

订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
Maximum supply voltage, V_IN				63	V
SD/SS pin input voltage⁽²⁾				6	V
Delay pin voltage⁽²⁾				1.5	V
Flag pin voltage			–0.3	45	V
Feedback pin voltage			–0.3	25	V
Output voltage to ground, steady-state				–1	V
Power dissipation			Internally limited
Lead temperature	S package	Vapor phase (60 s)		215	°C
	S package	Infrared (10 s)		245
	T package, soldering (10 s)			260
Maximum junction temperature				150	°C
Storage temperature, T_stg			–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Voltage internally clamped. If clamp voltage is exceeded, limit current to a maximum of 1 mA.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾⁽²⁾	±2000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) The human body model is a 100-pF capacitor discharged through a 1.5-k resistor into each pin.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
	Supply voltage	4.5	60	V
T_J	Temperature	–40	125	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		LM2593HV		UNIT
		NDZ (TO-220)	KTW (TO-263)
		7 PINS	7 PINS
R_θJA	Junction-to-ambient thermal resistance	50⁽²⁾	50⁽³⁾	°C/W
			30⁽⁴⁾
			20⁽⁵⁾
R_θJC(top)	Junction-to-case (top) thermal resistance	2	2	°C/W
R_θJB	Junction-to-board thermal resistance	—	—	°C/W
ψ_JT	Junction-to-top characterization parameter	—	—	°C/W
ψ_JB	Junction-to-board characterization parameter	—	—	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	—	—	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

(2) Junction to ambient thermal resistance (no external heat sink) for the package mounted TO-220 package mounted vertically, with the leads soldered to a printed-circuit board with (1 oz) copper area of approximately 1 in².

(3) Junction to ambient thermal resistance with the TO-263 package tab soldered to a single-sided printed-circuit board with 0.5 in² of (1 oz) copper area.

(4) Junction to ambient thermal resistance with the TO-263 package tab soldered to a single-sided printed-circuit board with 2.5 in² of (1 oz) copper area.

(5) Junction to ambient thermal resistance with the TO-263 package tab soldered to a double-sided printed-circuit board with 3 in² of (1 oz) copper area on the LM2593HVS side of the board, and approximately 16 in² of copper on the other side of the printed-circuit board.

6.5 Electrical Characteristics

T_J = 25°C, V_IN = 12 V for the 3.3-V, 5-V, and adjustable versions, and I_LOAD = 500 mA (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN⁽¹⁾	TYP⁽²⁾	MAX⁽¹⁾	UNIT
Ib	Feedback bias current	Adjustable version only, VFB = 1.3 V		50	10	100	nA
f_O	Oscillator frequency⁽³⁾	T_J = 25°C		127	150	173	kHz
f_O	Oscillator frequency⁽³⁾	T_J = –40°C to 125°C		110		173	kHz
V_SAT	Saturation voltage	I_OUT = 2 A; no diode, inductor or capacitor connected to output pin⁽⁴⁾; Feedback pin removed from output and connected to 0 V to force the output transistor switch ON⁽⁵⁾	T_J = 25°C		1.1	1.3	V
V_SAT	Saturation voltage		T_J = –40°C to 125°C			1.4	V
DC	Max duty cycle (ON)	Feedback pin removed from output and connected to 0 V to force the output transistor switch ON			100%
DC	Min duty cycle (OFF)	Feedback pin removed from output and connected to 12 V for the 3.3-V, 5-V, and the adjustable versions to force the output transistor switch OFF			0%
I_CLIM	Switch current limit	Peak current; no diode, inductor or capacitor connected to output pin; Feedback pin removed from output and connected to 0 V to force the output transistor switch ON	T_J = 25°C	2.4	3	3.7	A
I_CLIM	Switch current limit		T_J = –40°C to 125°C	2.3		4	A
I_L	Output leakage current	Feedback pin removed from output and connected to 12 V for the 3.3-V, 5-V, and the adjustable version to force the output transistor switch OFF; V_IN = 60 V, output = 0 V, output = −1 V		50	5	30	mA
I_Q	Operating quiescent current	SD and SS pin open, Feedback pin removed from output and connected to 12 V for the 3.3-V, 5-V, and the adjustable version to force the output transistor switch OFF			5	10	mA
I_STBY	Standby quiescent current	SD and SS pin = 0 V, V_IN = 60 V	T_J = 25°C		90	200	µA
I_STBY	Standby quiescent current	SD and SS pin = 0 V, V_IN = 60 V	T_J = –40°C to 125°C			250	µA
SHUTDOWN AND SOFT-START CONTROL
V_SD	Shutdown threshold voltage	Low (shutdown mode)			1.3	0.6	V
V_SD	Shutdown threshold voltage	High (soft-start mode)				2	V
V_SS	Soft-start voltage	V_OUT = 20% of nominal output voltage			2		V
V_SS	Soft-start voltage	V_OUT = 100% of nominal output voltage			3		V
I_SD	Shutdown current	V_SHUTDOWN = 0.5 V			5	10	µA
I_SS	Soft-start current	V_Soft-start = 2.5 V			1.5	5	µA
	Regulator dropout detector	Low (flag ON)			96%
	Threshold voltage	Low (flag ON)		92%		98%
V_FSAT	Flag output saturation voltage	I_SINK = 3 mA, V_DELAY = 0.5 V			0.3		µA
I_FL	Flag output leakage current	V_FLAG = 60 V		0.7	0.3	1	V
	Delay pin threshold voltage	Low (flag ON), high (flag OFF) and V_OUT regulated		1.21	1.25	1.29	V
	Delay pin source current	V_DELAY = 0.5 V			3	6	µA
	Delay pin saturation	Low (flag ON)		350	70	400	mV

(1) All limits specified at room temperature unless otherwise noted. All room temperature limits are 100% production tested. All limits at temperature extremes are ensured via correlation using standard Statistical Quality Control (SQC) methods. All limits are used to calculate Average Outgoing Quality Level (AOQL).

(2) Typical numbers are at 25°C and represent the most likely norm.

(3) The switching frequency is reduced when the second stage current limit is activated. The amount of reduction is determined by the severity of current overload.

(4) No diode, inductor or capacitor connected to output pin.

(5) Feedback pin removed from output and connected to 0 V to force the output transistor switch ON.

6.6 Electrical Characteristics – 3.3-V Version

T_J = 25°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
SYSTEM PARAMETERS
V_OUT	Output voltage	4.75 V ≤ V_IN ≤ 60 V, 0.2 A ≤ I_LOAD ≤ 2 A	T_J = 25°C	3.168	3.3	3.432	V
V_OUT	Output voltage	4.75 V ≤ V_IN ≤ 60 V, 0.2 A ≤ I_LOAD ≤ 2 A	T_J = –40°C to 125°C	3.135		3.465	V
η	Efficiency	V_IN = 12 V, I_LOAD = 2 A			76%

6.7 Electrical Characteristics – 5-V Version

T_J = 25°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
V	Output voltage	7 V ≤ V_IN ≤ 60 V, 0.2 A ≤I_LOAD ≤ 2 A	T_J = 25°C	4.8	5	5.2	V
V	Output voltage	7 V ≤ V_IN ≤ 60 V, 0.2 A ≤I_LOAD ≤ 2 A	T_J = –40°C to 125°C	4.75		5.25	V
η	Efficiency	V_IN = 12 V, I_LOAD = 2 A			81%

6.8 Electrical Characteristics – Adjustable Voltage Version

T_J = 25°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
VFB	Feedback voltage	4.5 V ≤ V_IN ≤ 60 V, 0.2 A ≤ I_LOAD ≤ 2 A, V_OUT programmed for 3 V (see Test Circuits)	T_J = 25°C	1.193	1.23	1.267	V
VFB	Feedback voltage		T_J = –40°C to 125°C	1.18		1.28	V
η	Efficiency	V_IN = 12 V, V_OUT = 3 V, I_LOAD = 2 A			75%

6.9 Typical Characteristics

Figure 1. Normalized Output Voltage

Figure 3. Efficiency

Figure 5. Switch Current Limit

Figure 7. Operating Quiescent Current

Figure 9. Minimum Operating Supply Voltage

Figure 11. Flag Saturation Voltage

Figure 13. Soft-Start

Figure 15. Delay Pin Current

Figure 17. Shutdown/Soft-Start Threshold Voltage

Horizontal Time Base: 2 µs/div.
V_IN = 20 V, V_OUT = 5 V, I_LOAD = 2 A,
L = 32 µH, C_OUT = 220 µF, C_OUT ESR = 50 mΩ
Output Pin Voltage, 10 V/div.
Inductor Current, 1 A/div.
Output Ripple Voltage, 50 mV/div.

Figure 19. Continuous Mode Switching Waveforms

Horizontal Time Base: 50 µs/div.
V_IN = 20 V, V_OUT = 5 V, I_LOAD = 500 mA to 2 A,
L = 32 µH, C_OUT = 220 µF, C_OUT ESR = 50 mΩ
Output Voltage, 100 mV/div. (AC)
500-mA to 2-A Load Pulse

Figure 21. Load Transient Response
for Continuous Mode

Figure 2. Line Regulation

Figure 4. Switch Saturation Voltage

Figure 6. Dropout Voltage

Figure 8. Shutdown Quiescent Current

Figure 10. Feedback Pin Bias Current

Figure 12. Switching Frequency

Figure 14. Shutdown/Soft-Start Current

Figure 16. Soft-Start Response

Figure 18. Internal Gain-Phase Characteristics

Horizontal Time Base: 2 µs/div.
V_IN = 20 V, V_OUT = 5 V, I_LOAD = 500 mA,
L = 10 µH, C_OUT = 330 µF, C_OUT ESR = 50 mΩ
Output Pin Voltage, 10 V/div.
Inductor Current, 0.5 A/div.
Output Ripple Voltage, 100 mV/div.

Figure 20. Discontinuous Mode Switching Waveforms

Horizontal Time Base: 200 µs/div.
V_IN = 20 V, V_OUT = 5 V, I_LOAD = 500 mA to 2 A,
L = 10 µH, C_OUT = 330 µF, C_OUT ESR = 50 mΩ
Output Voltage, 100 mV/div. (AC)
500-mA to 2-A Load Pulse

Figure 22. Load Transient Response
for Discontinuous Mode