ZHCS547K January   2010  – February 2018 LM27402

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      典型应用电路
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Performance Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Wide Input Voltage Range
      2. 7.3.2  UVLO
      3. 7.3.3  Precision Enable
      4. 7.3.4  Soft-Start and Voltage Tracking
      5. 7.3.5  Output Voltage Setpoint and Accuracy
      6. 7.3.6  Voltage-Mode Control
      7. 7.3.7  Power Good
      8. 7.3.8  Inductor-DCR-Based Overcurrent Protection
      9. 7.3.9  Current Sensing
      10. 7.3.10 Power MOSFET Gate Drivers
      11. 7.3.11 Pre-Bias Start-up
    4. 7.4 Device Functional Modes
      1. 7.4.1 Fault Conditions
        1. 7.4.1.1 Thermal Protection
        2. 7.4.1.2 Current Limit
        3. 7.4.1.3 Negative Current Limit
        4. 7.4.1.4 Undervoltage Threshold (UVT)
        5. 7.4.1.5 Overvoltage Threshold (OVT)
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1  Converter Design
      2. 8.1.2  Inductor Selection (L)
      3. 8.1.3  Output Capacitor Selection (COUT)
      4. 8.1.4  Input Capacitor Selection (CIN)
      5. 8.1.5  Using Precision Enable
      6. 8.1.6  Setting the Soft-Start Time
      7. 8.1.7  Tracking
      8. 8.1.8  Setting the Switching Frequency
      9. 8.1.9  Setting the Current Limit Threshold
      10. 8.1.10 Control Loop Compensation
      11. 8.1.11 MOSFET Gate Drivers
      12. 8.1.12 Power Loss and Efficiency Calculations
        1. 8.1.12.1 Power MOSFETs
        2. 8.1.12.2 High-Side Power MOSFET
        3. 8.1.12.3 Low-Side Power MOSFET
        4. 8.1.12.4 Gate-Charge Loss
        5. 8.1.12.5 Input and Output Capacitor ESR Losses
        6. 8.1.12.6 Inductor Losses
        7. 8.1.12.7 Controller Losses
        8. 8.1.12.8 Overall Efficiency
    2. 8.2 Typical Applications
      1. 8.2.1 Example Circuit 1
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Custom Design With WEBENCH® Tools
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Example Circuit 2
      3. 8.2.3 Example Circuit 3
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Power Stage Layout
      2. 10.1.2 Gate Drive Layout
      3. 10.1.3 Controller Layout
      4. 10.1.4 Thermal Design and Layout
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方米6体育平台手机版_好二三四免责声明
      2. 11.1.2 开发支持
        1. 11.1.2.1 使用 WEBENCH® 工具创建定制设计
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.1.11 MOSFET Gate Drivers

To drive large power MOSFETs with high gate charge, the LM27402 includes low impedance high-side and low-side gate drivers that source and sink high current for fast transition times and increased efficiency. The high-side gate driver is powered from a bootstrap circuit, whereas the low-side driver is powered by the VDD rail as shown in Figure 39.

LM27402 30092624.gifFigure 39. High-Side and Low-Side MOSFET Gate Drivers

The circuit in Figure 39 effectively supplies close to the VDD voltage (4.5 V) between the gate and the source of the high-side MOSFET during the on time. Use a Schottky diode for DBOOT with sufficient reverse voltage rating and continuous current rating. The average current through the boot diode depends on the gate charge of the high-side MOSFET and the switching frequency. It is calculated using Equation 24.

Equation 24. LM27402 30092631.gif

IDBOOT is the average current through the DBOOT diode, fSW is the switching frequency and QGHS is the gate charge of the high-side MOSFET. If the input voltage is below 5.5 V, it is recommended to connect VDD to the input supply of the LM27402 through a 1-Ω resistor as shown in Figure 40. This increases the gate voltage amplitude of both the low-side and high-side MOSFETs, thus reducing RDS(on).

LM27402 30092632.gifFigure 40. Tie VDD to VIN when VIN ≤ 5.5V
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